MRF4427R2

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The MRF4427R2 transistor is a high voltage, medium power bipolar transistor specially designed for use in HDTV and CATV CATV amplifier applications. It is a depopulated version of the MRF4427R3. The MRF4427R2 is suitable for broadband, Class A, B and C applications and is RF input/output compatible. It features an integral emitter ballast resistor and features a wideband frequency response of up to 350 MHz.

The MRF4427R2 is a NPN silicon bipolar transistor with a high current (167 mA) and low voltage (2.5 V). It is capable of handling up to 43 V and can operate over a wide temperature range of -40C to +100C. The transistor has two types of connections, P1 and P2, for the collector, base, and emitter. The P1 connection has the collector, base and emitter connections soldered together, while the P2 connection is designed as a separate connection with the collector, base and emitter connections connected separately.

The MRF4427R2 is ideal for use in applications where high current and high voltage handling capability is required. The device can be used for RF amplifier applications, such as HDTV, CATV, and wireless communications applications. The transistor is also suitable for high power audio amplifier applications.

The MRF4427R2 features an integral base-emitter capacitance and a high breakdown voltage which can tolerate a large amount of input power. The device is also able to handle high peak output current and has a high power dissipation level. It has an mechanical stability of ±0.005% and is designed with an impedance matching transformer which provides improved efficiency and power supply stability.

The integrated emitter ballast resistor provides optimum operation for Class B, C and A/B applications. The resistor also helps provide power gain flatness as well as good thermal stability and fast transient response. In addition, the device is equipped with a short circuit shutdown circuit which automatically provides protection while it is in operation.

The MRF4427R2 is a very versatile transistor that can be used in a variety of applications. It is well suited for use in high voltage, high power, and high frequency applications. In addition, it is a low voltage transistor with a higher current capability which makes it a good choice for applications where higher current levels are required.

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