MS2321 Allicdata Electronics
Allicdata Part #:

MS2321-ND

Manufacturer Part#:

MS2321

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS RF BIPO 87.5W 1.5A M104
More Detail: RF Transistor NPN 65V 1.5A 1.025GHz ~ 1.15GHz 87.5...
DataSheet: MS2321 datasheetMS2321 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): --
Gain: 10dB
Power - Max: 87.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: --
Current - Collector (Ic) (Max): 1.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M105
Supplier Device Package: M105
Description

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The MS2321 is a 2.5GHz radio frequency (RF) bipolar junction transistor (BJT). It is a NPN transistor with a maximum frequency of 2.5GHz, making it suitable for a variety of RF applications. It is designed to operate in Class AB linear amplifiers and Class C switching applications. The MS2321 is designed with a variety of features such as high gain linearity, low-noise cut-off frequency, high output power, and enhanced temperature stability.

The MS2321 has a wide range of applications, including RF amplifiers, RF oscillators, receivers, transmitters, transceivers, modulators and demodulators, microwave ovens, radar, and other military and space applications. It is also suitable for the production of low-noise amplifiers, radio receivers, and radio transmitters.

The working principle of the MS2321 is that it is a controlled current device. The device consists of two main regions - the base and the collector. The base region is designed to allow current to flow through it, while the collector requires bias voltage to enable current to flow. When a current flows through the base, it generates a voltage across the collector and emitter of the transistor, which is used to generate the intended signal. This voltage can then be amplified to the desired level by adding additional components to the transistor. The difficulty with this process is that the gain of the signal is dependent on the gain of the transistor.

The MS2321 has proven to be a reliable and efficient RF transistor. Its linearity, power output, and temperature stability make it well suited for use in a variety of RF applications. The MS2321 can provide high-quality signal performance, making it an excellent choice for high-end RF applications and applications that require low-noise signals.

In summary, the MS2321 is a high-frequency bipolar transistor designed for use in RF amplifiers, RF oscillators, receivers, transmitters, transceivers, modulators and demodulators, microwave ovens, and other military and space applications. Its working principle is based on current control, allowing a signal to be produced and then amplified by additional components. The MS2321 has proven itself to provide high-quality signal performance, making it a great option for applications that require an efficient, reliable, and low-noise signal.

The specific data is subject to PDF, and the above content is for reference

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