MS2321A

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MS2321A is a NPN silicon Bipolar Junction Transistor (BJT) that is specifically designed for RF applications.

The MS2321A has typical characteristics that make it suitable for use in HF/VHF applications up to 300 MHz, with maximum power capabilities of up to 250 mW. It offers a low noise figure of 4 dB, a maximum gain of 11.2 dB, and operates over a wide range of collector currents, ranging from 0.6 mA to 20 mA. This range makes the device suitable for a wide range of applications.

The MS2321A has a maximum operating voltage of 25 V, which makes it well suited for operation in circuits requiring wide voltage swings. Its maximum collector-emitter voltage rating (VCEO) also makes it appropriate for use in high-frequency applications, where the high collector-emitter voltage breakdown voltage is a limiting factor.

The MS2321A utilizes a multilayer emitter structure consisting of a polysilicon strip over an n-type epitaxial layer. This structure allows the device to achieve a high gain, while still maintaining a low saturation voltage. The device also features a low parasitic capacitance between the collector and emitter, which makes it suitable for use in high-frequency applications where capacitive loss is a consideration.

The MS2321A also features a large operating temperature range, from -55°C to 200°C, making it suitable for a wide range of applications. Its thermally-limited safe operating area (SOA) protection and collector-emitter saturation voltage further improve the device’s robustness, making it suitable for use in demanding environments.

The working principle of the MS2321A is based on the bipolar junction transistor. The device consists of three layers of semiconductor material, two p-type layers separated by an n-type layer, which forms a junction between the two. When current is passed through the base of the device, it causes holes to move from the p-layer to the n-layer, allowing current to flow between the collector and emitter. This current flow can be adjusted by controlling the amount of current passed through the base.

The MS2321A is ideal for use in RF applications, and its low noise, high gain, and wide temperature range make it suitable for a wide range of applications. Its versatile operation, robust SOA protection, and thermally-limited collector-emitter saturation voltage make it a reliable choice for use in demanding environments.

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