MS2341

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	65V
Frequency - Transition:	1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f):	--
Gain:	9dB
Power - Max:	87.5W
DC Current Gain (hFE) (Min) @ Ic, Vce:	--
Current - Collector (Ic) (Max):	2.6A
Operating Temperature:	200°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	M115
Supplier Device Package:	M115

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MS2341 Application Field and Working Principle

The MS2341 is a radio frequency (RF) bipolar junction transistor (BJT) designed for use in microwave and millimeter-wave communication systems. It is manufactured by a company called EUMCC. It is characterized by its high breakdown voltage, high-power output and high level of integration. It is used in the fields of telecommunications, military, aerospace, automotive and medical.The MS2341 is a N-type BJT which has a base, emitter and collector. It uses the collector-base voltage to control the collector to emitter current. Its working principle involves a process of current flow from collector to emitter through the base. This is called the depletion region and it is located between the base and collector. The amount of current flowing from collector to emitter depends on the amount of voltage applied to the base. As the voltage is increased, the number of electrons accumulating near the base will increase, thus increasing the current flow from collector to emitter.The MS2341 is designed for use in high power applications, such as telecommunications and military. It has a relatively high output power of up to 13 watts, which can be used to drive high power electronic components. It has a high breakdown voltage of up to 55 volts, making it suitable for high voltage applications. It has a wide range of operating frequencies, from 9kHz to 8GHz, making it suitable for use in a variety of microwave and millimeter-wave communication systems.The MS2341 is also characterized by its high level of integration. It contains two resistors, two capacitors and two IDT filters integrated into the package. This reduces the number of components required in an application and increases the reliability of the circuit. Additionally, the packaging allows for the easy assembly of the device and makes it easier to test.The MS2341 is a high frequency bipolar junction transistor designed for high power applications. It is characterized by its high breakdown voltage, high output power, and high level of integration. It is used in a variety of applications, from telecommunications to military. Its high frequency capabilities make it suitable for use in microwave and millimeter-wave communication systems. Its high level of integration makes it ideal for reducing the number of components required in an application.

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