Allicdata Part #: | MS2356A-ND |
Manufacturer Part#: |
MS2356A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RF POWER TRANSISTOR |
More Detail: | RF Transistor |
DataSheet: | MS2356A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Part Status: | Obsolete |
Description
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MS2356A application field and working principleThe MS2356A is a type of transistor used in radio frequency (RF) applications. It is an NPN silicon transistor that is designed for use in HF communications and broadcast bands.The MS2356A is a general-purpose, low-noise transistor. It is capable of handling a wide range of frequencies from the lower HF bands up to the VHF and UHF bands. It is also suitable for use in RF amplifiers, oscillators, and mixers.The MS2356A has a hFE of 500-800 and a large gain bandwidth product of 16 MHz. Additionally, it has a high frequency response due to its low cutoff frequency of 4 MHz. This ensures high linearity and stability in RF applications.The MS2356A transistor is capable of operating at high power levels of up to 80 watts while maintaining excellent gain and efficiency. This makes it suitable for use in high-power applications such as radio transmitters and amplifiers.The MS2356A is based on a "dual-gate" construction that provides improved performance over traditional single-gate designs. The dual-gate configuration increases the transistor\'s gain and reduces the noise figure. Additionally, the dual-gate configuration increases the collector-emitter voltage which makes it more suitable for high power applications.The MS2356A is also a self-biasing transistor. This means that it does not require any external components for proper operation and can be used directly in a circuit without any additional components. This feature makes the transistor easy to use and reliable in operation.The MS2356A is primarily designed for operation in the VHF and UHF bands which require relatively high power. However, it can also be used in the lower HF bands, such as the AM and FM channels. These applications typically require less power and the MS2356A has a lower noise figure than transistors designed specifically for these frequencies.The MS2356A has a very low base-emitter saturation voltage which improves the transistor\'s performance in high frequency applications. Additionally, the transistor is designed to operate in the low frequencies with minimal distortion. This makes it suitable for use in radio receivers and other low noise applications.Overall, the MS2356A is a versatile, low noise transistor that is suitable for a variety of RF applications. It is easy to use, has a wide gain bandwidth, and is capable of handling high power levels. It is ideal for use in both the high and lower frequencies, making it a reliable and highly capable transistor for a variety of applications.
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