MS2361

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	65V
Frequency - Transition:	1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f):	--
Gain:	9dB
Power - Max:	87.5W
DC Current Gain (hFE) (Min) @ Ic, Vce:	--
Current - Collector (Ic) (Max):	2.6A
Operating Temperature:	200°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	M115
Supplier Device Package:	M115

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MS2361 is a bipolar radio frequency (RF) transistor. It is a high-performance amplifier with an NPN configuration and very low noise figure. Its proper use can provide excellent performance characteristics when it comes to signal amplification in a wide frequency range.In terms of application field, this device is suitable for RF and microwave systems, like those seen in wireless communication or aerospace and military applications. Due to its high level of performance, it is also ideal for signal amplification in low noise receivers; particularly those operating in the frequency range of 400 MHz to 10 GHz.In terms of specifications, MS2361 features a power gain of 24 dB, a noise figure of 1.2 dB and an output power capability of 30 mW. It has a rated collector current of 0.1 A, and its total power dissipation stands at 350 mW. This device is available in three different packages: dual-in-line (DIL), surface-mount (SMT) and pin-type (PT).As for its working principle, MS2361 relies on a typical NPN bipolar transistor design, where there are three layers of semiconductor material that have different arrangements, as well as different properties. The layers are the base, the emitter and the collector.When these layers become biased – meaning that a voltage is applied to them – the underlying current flow begins. This is because the differences between the several properties of each layer allows a conducting channel (or gate) to form between them.Therefore, when a current is allowed to flow through this gate, one layer is injected with electrons while the other is deprived of them. This is how transistor devices are able to work as amplifiers, allowing a small current at its base to be amplified at its collector and/or emitter terminals.When operating in low noise receivers, the base current and the voltage at the emitter must be very carefully adjusted. The degree of amplification will depend on these factors, as well as the available input signal, power levels, atmospheric conditions, etc. The goal is to ensure a high-bandwidth signal, without too much distortion or noise.On top of that, RF output power is also determined by the transistor’s collector current and voltage. With the proper biasing of these two parameters (as well as some others), the design of a transistor amplifier can be properly optimized.Overall, MS2361 is a very versatile NPN RF transistor with a wide range of applications. In terms of specifications, it offers an outstanding power gain of 24 dB, a noise figure of 1.2 dB and an output power capability of 30 mW. It is suitable for RF and microwave systems – particularly those that require a high level of performance. Through proper biasing of its base current and voltage, this device can be used to create an amplifier with excellent signal to noise ratio.

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