Allicdata Part #: | 1086-8542-ND |
Manufacturer Part#: |
MSMCJ170AE3 |
Price: | $ 1.12 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 170V 275V DO214AB |
More Detail: | N/A |
DataSheet: | MSMCJ170AE3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
596 +: | $ 1.01871 |
Voltage - Clamping (Max) @ Ipp: | 275V |
Supplier Device Package: | DO-214AB (SMCJ) |
Package / Case: | DO-214AB, SMC |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Current - Peak Pulse (10/1000µs): | 5.5A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 189V |
Voltage - Reverse Standoff (Typ): | 170V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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A transistor-voltage suppressor (TVS) diode, also known as a clamp diode, is a type of metal-oxide-semiconductor (MOS) device used to protect electrical circuits from voltage surges, both to protect the device itself from damage and to prevent other downstream devices from damage that may result from a surge. The MSMCJ170AE3 is a popular device in this classification.
The MSMCJ170AE3 consists of two MOSFET gates connected in series. Its purpose is to prevent high voltage noise from damaging input and output lines of a device. The device is designed to respond quickly to transient voltage surges, providing an instantaneous breaking of the current running through it. This helps to protect other components in the circuit from damage that would result from an unexpected surge.
The MSMCJ170AE3 is a three-pin device which is configured for use in a surface-mount package. The pins carry three functions, the gate and the gate terminals, and a protection diode. The gate is the transistor-level control of the clamp and it is connected in series with a rectifying diode. The gate terminals are connected to the respective resistor terminals, and are used to adjust the clamp’s sensitivity to voltage surges. Lastly, a protection diode is connected between the gate and the gate terminals.
The MSMCJ170AE3 offers high levels of protection against high energy discharges and pulse transients. It has a nominal operating voltage of 175V, and can handle surges up to 500V transient energy levels. In addition, the device is rated to withstand up to 10A of continuous current at a junction temperature of 125°C, making it suitable for use in high power circuits.
The MSMCJ170AE3 employs a simple mechanism to provide reliable surge protection. First, it is configured as a switch with a gate that is connected to a resistor in series with the protection diode. When the voltage level on the input line rises above the threshold voltage, it activates the gate, which causes the diode to shunt the current away from the input line and ground. Once the surge is dissipated, the gate deactivates, allowing the current to flow back to the input line.
The MSMCJ170AE3 has a wide application field and is used in a variety of electronic systems and circuit components. It is commonly used in automotive and industrial electronics, television and computer systems, and modern electronic gadgets. In addition, it is widely employed in the telecommunications industry for surge protection of radio-frequency (RF) circuits. Since these TVS diodes can operate in a wide variety of temperature ranges, they are often used in a variety of applications, from consumer electronic devices to extreme environment applications.
The MSMCJ170AE3 is a reliable and efficient device that provides stable and reliable surge protection. It is easy to use and install and can be used in a variety of application fields. With its excellent performance and protection levels, the MSMCJ170AE3 offers an effective solution for protecting sensitive circuits from damage resulting from high voltage noise or spikes.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MSMCJ100A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 100V 162V DO214... |
MSMCJ100AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 100V 162V DO214... |
MSMCJ10A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MSMCJ10AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MSMCJ110A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 110V 177V DO214... |
MSMCJ110AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 110V 177V DO214... |
MSMCJ11A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MSMCJ11AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MSMCJ120A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 120V 193V DO214... |
MSMCJ120AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 120V 193V DO214... |
MSMCJ12A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MSMCJ12AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MSMCJ130A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 130V 209V DO214... |
MSMCJ130AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 130V 209V DO214... |
MSMCJ13A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MSMCJ13AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MSMCJ14A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MSMCJ14AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MSMCJ150A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 150V 243V DO214... |
MSMCJ150AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 150V 243V DO214... |
MSMCJ15AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 15V 24.4V DO214... |
MSMCJ160A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 160V 259V DO214... |
MSMCJ160AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 160V 259V DO214... |
MSMCJ16A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 16V 26V DO214AB |
MSMCJ16AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 16V 26V DO214AB |
MSMCJ170A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 170V 275V DO214... |
MSMCJ170AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 170V 275V DO214... |
MSMCJ17A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
MSMCJ17AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
MSMCJ18A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
MSMCJ18AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
MSMCJ20A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
MSMCJ20AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
MSMCJ22A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
MSMCJ22AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
MSMCJ24A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 24V 38.9V DO214... |
MSMCJ26AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 26V 42.1V DO214... |
MSMCJ30AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 30V 48.4V DO214... |
MSMCJ33AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 33V 53.3V DO214... |
MSMCJ36A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 36V 58.1V DO214... |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL