MSMCJLCE16A Allicdata Electronics
Allicdata Part #:

1086-8697-ND

Manufacturer Part#:

MSMCJLCE16A

Price: $ 3.60
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 16V 26V DO214AB
More Detail: N/A
DataSheet: MSMCJLCE16A datasheetMSMCJLCE16A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
218 +: $ 3.26750
Stock 1000Can Ship Immediately
$ 3.6
Specifications
Voltage - Clamping (Max) @ Ipp: 26V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 100pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 57A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 17.8V
Voltage - Reverse Standoff (Typ): 16V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS diodes play an important role in the field of signal application, among which MSMCJLCE16A is a specific type with superior performance. The MSMCJLCE16A has its unique working principle. Not only does it provide a low clamping voltage and strong surge capability, it also provides an excellent clamping and ESD protection performance in a wide variety of environmental conditions. In order to understand better the application field and working principle of MSMCJLCE16A TVS diodes, we will first explain how these diodes are constructed and what their features are that make them so popular among signal processing professionals.

MSMCJLCE16A TVS diodes are constructed using a combination of metal oxide semiconductor (MOS) technology, directional element, and low-capacitance process. These components are assembled into one multi-layer package that has a structure with low inductance and tight dimensional control. This package is designed to provide an excellent performance with minimal power dissipation. The MOS construction of the diode allows it to have a low voltage rating and a higher peak pulse power performance.

It also features a low capacitance which enables it to provide superior protection against fast signal transitions. The diode features enhanced ESD protection as it prevents electric stress from entering the signal system. Additionally, it can withstand up to 1000 W of transient pulses. In addition, its low capacitance also helps in stabilizing the signal degradation, usually caused by electromagnetic interference.

Overall, the primary application field of MSMCJLCE16A TVS diodes is signal protection. As it has the ability to withstand high current surges and electrical stress, it is primarily used in a variety of systems in the telecommunications, aerospace and automotive industries. It is used for protecting signal lines and other circuitry in systems such as automotive sensors, in-vehicle communications, satellite communications, cell phone base stations, and many more.

In terms of its working principle, MSMCJLCE16A TVS diodes are used in circuits to provide protection to the signal from intense bursts of voltage or current. When an inrush current or voltage is generated, the diode starts to conduct current and dissipates the unwanted power and energy. This ensures that the circuit remains protected and that no damage is incurred by the system and the components of which it is composed.

The ability of the MSMCJLCE16A TVS diode to provide an excellent surge and ESD protection makes it suitable for various protection applications. This makes it perfect for signal processing in the telecommunication, automotive and aerospace industries. It is also widely used in consumer electronics, such as laptop computers and other portable electronic devices, for protection against power surges and ESD. In conclusion, the MSMCJLCE16A TVS diodes are the ideal choice for providing superior signal protection in various applications, due to its low voltage rating, high peak pulse power performance and excellent ESD protection.

The specific data is subject to PDF, and the above content is for reference

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