MSMCG58AE3 Allicdata Electronics
Allicdata Part #:

1086-8344-ND

Manufacturer Part#:

MSMCG58AE3

Price: $ 1.20
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 58V 93.6V DO215AB
More Detail: N/A
DataSheet: MSMCG58AE3 datasheetMSMCG58AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
556 +: $ 1.09148
Stock 1000Can Ship Immediately
$ 1.2
Specifications
Voltage - Clamping (Max) @ Ipp: 93.6V
Supplier Device Package: SMCG (DO-215AB)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 16A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 64.4V
Voltage - Reverse Standoff (Typ): 58V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The MSMCG58AE3 is a television signal transmittted amplifier rectifier diode, known as a TVS-diode. It is designed to protect sensitive electrical components from potential damage caused by high voltage surges, such as Electro-Static discharges, lightning and other transients. It is a bi-directional diode with a fast switching speed, capable of withstanding transient voltages up to 6000 Volts peak.

The MSMCG58AE3 is suitable for a wide range of applications, such as meters, relays and automotive electronics systems. It can be used to provide protection for digital circuit boards, communications systems, computer systems and other electronic systems.

The MSMCG58AE3 is composed of multiple layers of silicon and germanium and is formed into a reverse-biased junction diode. The diode is placed in the circuit so that it is reverse-biased with respect to the incoming power line. When a voltage surge is detected, the diode responds by quickly switching from its normally non-conductive state to its conducting state. This process is known as `avalanche breakdown\', which occurs when the diode becomes highly conductive due to charge carriers generated by the intense charge field at the start of the breakdown process. The diode then continually conducts the surge current until the transient voltage is reduced below the breakdown voltage.

The MSMCG58AE3 is available in a variety of packages, and can be used in any type of circuit. It has an operating temperature range from -40 degrees C to 85 degrees C and is RoHS compliant. It is also designed to meet UL94-V0 flammability requirements.

The MSMCG58AE3 can be used to protect a wide range of devices from potential damage due to high-voltage transients. It has a fast switching speed, which allows it to quickly conduct a surge current and protect the device before it can be damaged. The device is also designed to meet stringent safety requirements, making it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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