Allicdata Part #: | MT28EW128ABA1HPC-1SIT-ND |
Manufacturer Part#: |
MT28EW128ABA1HPC-1SIT |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 128M PARALLEL 64LBGA |
More Detail: | FLASH - NOR Memory IC 128Mb (16M x 8, 8M x 16) Par... |
DataSheet: | MT28EW128ABA1HPC-1SIT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Last Time Buy |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 128Mb (16M x 8, 8M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 95ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-LBGA (11x13) |
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Memory technology has long been used in various applications and offers a variety of advantages. The MT28EW128ABA1HPC-1SIT is a widely used memory technology that is reliable, cost effective, and offers a wide range of features to support numerous applications.
The MT28EW128ABA1HPC-1SIT is an EEPROM memory technology with 128 Mbit of memory and various features such as high speed data transfer, low power consumption, and a wide temperature range. It is also suitable for applications that require a low voltage operating voltage.
The MT28EW128ABA1HPC-1SIT can be implemented in various devices, including computers, Ethernet switches, routers, phones, digital cameras, and more. It is also used for embedded systems and can operate in a wide range of temperatures. In addition, the device is durable and has a long cycle life.
The primary applications of the MT28EW128ABA1HPC-1SIT include data storage, video files, flash memory and audio files. The device is also capable of storing large amounts of information, such as personal communication and business records.
The working principle of the MT28EW128ABA1HPC-1SIT is based on manipulation of electric charge. The device is made up of a series of metal oxide-semiconductor (MOS) transistors, each of which has a gate electrode and two source-drain electrodes.
The transistors act as switches to store and retrieve information. When a voltage is applied to the gate electrode, it allows electrical charges to move from the source electrode to the drain electrode. This process is known as writing, which is used to store information in the device.
To read information from the device, a voltage is applied to the gate electrode. This causes the charge stored in the transistor to move from the drain electrode back to the source electrode. This process is known as reading.
The MT28EW128ABA1HPC-1SIT is a reliable and cost-effective memory technology with many advantages. It has a wide range of features, low power consumption and can operate in a wide temperature range. The device is also suitable for various applications, such as data storage, video files, flash memory, audio files, and personal and business records.
The specific data is subject to PDF, and the above content is for reference
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