MT28FW01GABA1LPC-0AAT TR

Series:	Automotive, AEC-Q100
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	1Gb (64M x 16)
Write Cycle Time - Word, Page:	60ns
Access Time:	105ns
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 105°C (TA)
Mounting Type:	Surface Mount
Package / Case:	64-LBGA
Supplier Device Package:	64-LBGA (11x13)

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As a kind of memory, MT28FW01GABA1LPC-0AAT TR is well known due to its wide applications and working principles. MT28FW01GABA1LPC-0AAT TR can be used in many digital products such as vehicles, consumer electronics, and industrial products. It is composed of Serial Peripheral Interface (SPI) flash memory and high-performance power management. MT28FW01GABA1LPC-0AAT TR not only offers fast access for frequently used data but also provides data transfer in various industrial systems.MT28FW01GABA1LPC-0AAT TR\'s working principle is based on the integration of logic and memory. The specific working method may be different due to different ways of integration, but generally there are two internal memory cells. The logic part is responsible for external data processing, which could be converted from the incoming data to the executable commands by the device. The memory part of MT28FW01GABA1LPC-0AAT TR consists of two internal memory cells, which are acted as temporary storage devices. The first memory cell holds the data that is currently being processed, while the second cell holds the status of the device.The internal memory of MT28FW01GABA1LPC-0AAT TR is divided into several segments: program memory, instruction memory and data memory. The program memory of MT28FW01GABA1LPC-0AAT TR is used to store the program code and instructions, while the instruction memory stores the instructions that are used to control the execution of the program code. The data memory of MT28FW01GABA1LPC-0AAT TR stores information such as external memory parameters that are configurable, and also internal parameters such as flag registers and status bits.MT28FW01GABA1LPC-0AAT TR\'s instruction set supports various memory transfers, various mathematical and logical operations, communications, interrupts, and interrupts handling. It also supports various store and fetch instructions for accessing both program and data memory. The instruction set also supports various branch and jump instructions, which allows complex control sequences and data manipulation.The memory size of a MT28FW01GABA1LPC-0AAT TR device varies depending on the application field. For some applications that require high-density data storage, the device size may be larger. For other applications that require higher performance and/or lower memory consumption, the device size may be smaller. Therefore, the memory size of MT28FW01GABA1LPC-0AAT TR is application specific and can be adjusted accordingly to meet the specific requirements of different application fields.The high-performance power management of MT28FW01GABA1LPC-0AAT TR is provided by the integrated switches, transistors, and other components. Power consumption can be minimized by making use of the dynamic voltage scaling capability and by reducing the voltage supply to the parts that are not used at any given time. Additionally, the power consumption can be reduced by conducting internal operations with very low power.In conclusion, MT28FW01GABA1LPC-0AAT TR has been adopted by many digital products due to its superior working principle, excellent performance in power management, and wide application field. Its wide application field and working principle make it an ideal memory device for both commercial and industrial applications.

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