MT28F400B5SG-8 T Allicdata Electronics
Allicdata Part #:

MT28F400B5SG-8T-ND

Manufacturer Part#:

MT28F400B5SG-8 T

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 4M PARALLEL 44SOP
More Detail: FLASH - NOR Memory IC 4Mb (512K x 8, 256K x 16) Pa...
DataSheet: MT28F400B5SG-8 T datasheetMT28F400B5SG-8 T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8, 256K x 16)
Write Cycle Time - Word, Page: 80ns
Access Time: 80ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-SOIC (0.496", 12.60mm Width)
Supplier Device Package: 44-SOP
Base Part Number: MT28F400B5
Description

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Memory is an important component of various types of devices, however, there is a dizzying array of memory available on the market. MT28F400B5SG-8 T is a kind of non-volatile memory which sublty belonging to Flash Memory. It has some special feature which render it suitable for embedding into various application fields and take a necessary role in making and develop certain functions. This passage mainly explain the application field, working principle and poteintals of MT28F400B5SG-8 T, in order to propose a better and efficiently process control.

MT28F400B5SG-8 T memory is widely applied in various types of embedded systems. Its salient feature determines that it can widely work in industrial storage and control device, automotive, computer and injection molding machine,etc. With certain advantages,such as high-endurance, low-power, high-speed, and low-cost, MT28F400B5SG-8 T not only can store relatively large data and provide multi-layer security protection, but also provide great convenience and perfectly match requirements of efficiency.

In terms of working principle, things might be a bit more complex. When the control voltage reaches a certain value, the FETs inside will be turned on and the information stored in the memory will be read out. The output information can be used to control the corresponding circuit as per different application fields. In addition, if any new informations need to be stored in the memory, the transistors inside the non-volatile memory will be tuned on, so that the new informations can be read and writed into the storage cell array. The whole process will eventually control the corresponding circuit in a certain usage.

As the development of technology, MT28F400B5SG-8 T are endowed with lack of potentials.For instance, this kind of memory can take an important role in applications involving image and voice recognition, data protection, and high-speed data processing compared to other embedded memories. Owing to the flexible feature and efficient coefficient, it reaps great favor in the modern industry and enjoys a wide range of customer group. In addition, the low-power and strong-endurance performance ensures that MT28F400B5SG-8 T non-volatile memory can work for a long time with great consistency.

To sum up, MT28F400B5SG-8 T non-volatile memory is not only suitable for a wide range of application fields, but also can bear great potentials. In the meanwhile, its working principle is relatively clearly. With such advantages, MT28F400B5SG-8 T is thus regarded as an essential part in a range of device. Therefore, it should be highly useful if this non-volatile memory can be applied and developed properly.

The specific data is subject to PDF, and the above content is for reference

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