Allicdata Part #: | MT28F004B5VG-8TET-ND |
Manufacturer Part#: |
MT28F004B5VG-8 TET |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 4M PARALLEL 40TSOP I |
More Detail: | FLASH - NOR Memory IC 4Mb (512K x 8) Parallel 80n... |
DataSheet: | MT28F004B5VG-8 TET Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 4Mb (512K x 8) |
Write Cycle Time - Word, Page: | 80ns |
Access Time: | 80ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 40-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 40-TSOP I |
Base Part Number: | MT28F004B5 |
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Memory is an essential element in the design of modern microchips, and the MT28F004B5VG-8 TET is a type of memory, or RAM, used in a variety of different applications. This memory has an 8-bit data bus and is used in applications where cost is an important factor, as well as applications that may benefit from low power consumption and operation speed. Understanding the technology and working principles behind this type of memory is key to its successful implementation in a wide range of application areas.The MT28F004B5VG-8 TET is organized as a set of four banks, each bank being 4K bytes in size for a total of 16K bytes of memory. It uses CMOS technology and runs on a single 5 volt supply and a maximum of 10mA to operate. This memory is organized in a ‘Block Bank Regulated’ manner, which allows data to be written and read in a more structured way without interruption. The MT28F004B5VG-8 also supports a ‘High Endurance’ write type which ensures data can be written and rewritten hundreds of thousands of times without any degradation.The MT28F004B5VG-8 TET provides fast reading and writing, programmable block and protection, as well as data retention and intelligence protection systems. It is suitable for a very wide range of applications, including embedded Bluetooth and Wi-Fi modules, fitness tracking wearables, and remote control systems.One of the key advantages of the MT28F004B5VG-8 TET is its high power efficiency. It is one of the few memories on the market that does not require a voltage regulator to maintain its operation, which means it can dissipate power in a much more efficient manner when compared to other memories of equivalent complexity. This offers an energy-saving option which makes it suitable for devices running on battery power.In terms of the working principles behind the MT28F004B5VG-8 TET memory, it is based on an SRAM memory cell. SRAM, or Static RAM, is a type of memory which does not require a continuous source of power to store data, with the data instead being held in transistors. These cells are organized into banks and are capable of operating independently of other banks, allowing for a faster overall data throughput than other RAM technologies.The MT28F004B5VG-8 TET memory is also protected by a number of different methods. It has an on-chip ECC (Error Correction Code) generator and memory that allows for detection and correction of single bit errors. It is also protected from tampering and reverse engineering, through on-chip protection against illegal access and re-distribution of memory data.In summary, the MT28F004B5VG-8 TET memory offers a wide range of advantages, making it suitable for a variety of different applications. It is a form of static RAM that is low power and fast, organized in banks and protected with on-chip security feature to prevent tampering and reverse engineering. It offers improved power efficiency and cost effectiveness, making it an attractive choice for embedded systems and other applications.
The specific data is subject to PDF, and the above content is for reference
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