MT28FW01GABA1HJS-0AAT TR Allicdata Electronics
Allicdata Part #:

MT28FW01GABA1HJS-0AATTR-ND

Manufacturer Part#:

MT28FW01GABA1HJS-0AAT TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 1G PARALLEL 56TSOP
More Detail: FLASH - NOR Memory IC 1Gb (64M x 16) Parallel 105...
DataSheet: MT28FW01GABA1HJS-0AAT TR datasheetMT28FW01GABA1HJS-0AAT TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q100
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (64M x 16)
Write Cycle Time - Word, Page: 60ns
Access Time: 105ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)
Description

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MT28FW01GABA1HJS-0AATTR is a type of embedded Flash memory with a TSOP48 interface and a wide operating temperature range of -40°C to +85°C. It is reliable and low-cost and offers excellent performance with very low power consumption when compared to other embedded memory solutions, making it ideal for applications in automotive, industrial, and consumer electronics markets.

The device is based on a single-voltage Flash memory with a capacity of up to 128 Mbit. In addition to being extremely reliable, MT28FW01GABA1HJS-0AATTR provides fast programming speeds and can handle data transfer rates of up to 200 Mbps. It also has a high endurance of more than one million erase/program cycles, making it suitable for long-term memory storage.

MT28FW01GABA1HJS-0AATTR is capable of storing code, firmware, and other data, including non-volatile data that remains stored in memory even after power is removed. The device is also suitable for use in applications such as automotive ECUs, industrial control systems, and consumer electronics, where low power consumption and high endurance are important.

The working principle of MT28FW01GABA1HJS-0AATTR is based on the NAND flash memory cell, in which data is stored in charge-balanced cells. Data can be programmed and erased in individual bits, with the same cells being used over and over again without wearing out. The memory cell’s reliability is maintained through error-correction algorithms that recover lost data while still keeping the integrity of the stored data intact. This technology is able to store data at a much lower cost than other types of memory, such as DRAM and SRAM, making it a cost-effective solution for embedded memory applications.

In addition to its low cost, MT28FW01GABA1HJS-0AATTR also offers excellent programming speeds and data transfer rates, making it ideal for applications such as automotive ECUs, industrial control systems, and consumer electronics. It can handle data transfer rates of up to 200 Mbps, and because of its low power consumption, it can be used in a wide range of applications with limited power sources.

To summarise, MT28FW01GABA1HJS-0AATTR is a reliable, low-cost memory solution with excellent performance and low power consumption. It offers an endurance of more than one million erase/program cycles, making it suitable for long-term memory storage. In addition to its low cost, it also offers fast programming speeds and data transfer rates, making it ideal for applications such as automotive ECUs, industrial control systems, and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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