Allicdata Part #: | MT28F008B3VG-9T-ND |
Manufacturer Part#: |
MT28F008B3VG-9 T |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 8M PARALLEL 40TSOP I |
More Detail: | FLASH - NOR Memory IC 8Mb (1M x 8) Parallel 90ns ... |
DataSheet: | MT28F008B3VG-9 T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 8Mb (1M x 8) |
Write Cycle Time - Word, Page: | 90ns |
Access Time: | 90ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 40-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 40-TSOP I |
Base Part Number: | MT28F008B3 |
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MT28F008B3VG-9 T is a high-speed, low-power memory chip which belongs to the Memory category. It is an 8-megabit multi-level cell (MLC) NAND Flash chip which features small form factor, high performance, low power consumption and high reliability. The chip is suitable for a variety of applications such as consumer electronics, embedded systems, industrial automation and medical devices. As an 8-megabit memory device, the MT28F008B3VG-9 T offers both high speed and high reliability. It features an asynchronous burst read operation and an asynchronous page encoding read operation.The MT28F008B3VG-9 T is a NAND Flash memory chip designed for various data storage applications. It is constructed from 128Gbits of EEPROM cells and is organized as a 8-megabit (1 megabyte) array. The MT28F008B3VG-9 T has two data buses, a control bus, and a SPI/SATA interface supporting asynchronous burst read and page encoding read transfers. The MT28F008B3VG-9 T memory device also provides a 2K-byte command/address (CA) bus for writing and reading data.In order to achieve its high data transfer rate, the MT28F008B3VG-9 T uses a asynchronous burst read operation. The chip operates in this mode by reading 16 clocks and 4 bytes per cell per transfer. An additional clock is used to read the page\'s end of block indicator. The asynchronous page encoding read mode of the MT28F008B3VG-9 T is used for reading single bytes rather than the entire sixteen bit for each cell. This mode allows for faster data transfer rates and helps reduce the power consumption of the memory device.The MT28F008B3VG-9 T has many advantages over traditional flash memory solutions. It offers high write cycles, high read performance and low power consumption. The chip also features a robust failure recovery system to protect data during power failures and power surges. The MT28F008B3VG-9 T also supports advanced wear leveling algorithms to ensure that all cells are evenly used.The MT28F008B3VG-9 T is a great choice for embedded systems, consumer electronics, industrial automation and medical applications. With its high data transfer rates, low power consumption, small form factor and high reliability, it is a great choice for applications that require robust memory solutions. The MT28F008B3VG-9 T is also a great choice for applications that require high-speed data transfer and efficient power consumption. With its wide range of applications, the MT28F008B3VG-9 T is a great choice for any situation.In conclusion, the MT28F008B3VG-9 T is a high-performance, low-power memory chip designed for a variety of data storage applications. It offers both high speed and high reliability and features a robust failure recovery system, advanced wear leveling algorithms and low power consumption. With its asynchronous burst read and page encoding read operations, the MT28F008B3VG-9 T is a great choice for embedded systems, consumer electronics, industrial automation and medical applications.
The specific data is subject to PDF, and the above content is for reference
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