Allicdata Part #: | MT28EW512ABA1LPC-0AAT-ND |
Manufacturer Part#: |
MT28EW512ABA1LPC-0AAT |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 512M PARALLEL 64LBGA |
More Detail: | FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Pa... |
DataSheet: | MT28EW512ABA1LPC-0AAT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q100 |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (64M x 8, 32M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 105ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-LBGA (11x13) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory MT28EW512ABA1LPC-0AAT Application Field and Working Principle
The MT28EW512ABA1LPC-0AAT (hereafter to be referred to as the ‘chip’) is a non-volatile memory integrated circuit used in embedded devices. It can store 8 million bits of data, which is equivalent to 1 million bytes or 1024 kilobytes of storage. It is organized into 8 pages, each containing 2 kilobytes of data. Aside from its data retention characteristics, the chip is also very low in power consumption, making it well-suited for real-time applications that require frequent write and read operations.
The chip belongs to a type of memory known as NAND flash memory. Unlike other kinds of memory, NAND flash memory does not use capacitors or refresh circuits. Instead, data is stored in cells arranged in an array. Each cell consists of a floating gate and a charge pump. An advantage of using the NAND type of memory is the high speed at which data can be read and written. The MT28EW512ABA1LPC-0AAT is rated to read and write 1000 words per second.
This type of memory has a number of potential applications in embedded systems. Its low power consumption makes it well-suited for applications that require frequent write and read operations, such as data logging and measurement systems. Its fast read and write speeds make it ideal for applications that need to process large amounts of data in short periods of time, such as communications systems. Its high endurance cycle count makes it suitable for use in applications that require frequent write operations, such as embedded flash drives.
In terms of its working principle, the chip consists of a constant current data line, which allows it to write data without the need for address decoders and complex logic circuits. An advantage of using the constant current data line is that it reduces the complexity of the design, and hence reduces the power consumption of the chip. Additionally, the constant current data line also allows the chip to write data in a more efficient manner, allowing the chip to read and write data more quickly than would be possible with other types of memory.
In order to write data, the chip needs to be powered in order to charge the floating gates. When a page of data is written, it is first sent to the cache of the chip and then finally written to the page location. In order to read the data, the chip needs to be powered, with the requested page address sent to the chip so that the requested data can be read. The data that is read from the chip is typically chehed against an ECC (error-correcting code) in order to ensure that the data read accurately reflects the data that was initially written.
In conclusion, the MT28EW512ABA1LPC-0AAT is a low-power, high-speed non-volatile memory integrated circuit used in embedded devices. It uses a constant current data line to write data, and can read and write data at a rate of 1,000 words per second. It is well-suited for applications that require frequent write and read operations, such as data logging and communications systems, as well as embedded flash drives that require high endurance cycle counts.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MT28EW256ABA1HPC-0SIT | Micron Techn... | 3.12 $ | 3165 | IC FLASH 256M PARALLEL 64... |
MT28F128J3FS-12 ET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 64... |
MT28F128J3RG-12 ET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 56... |
MT28F320J3FS-11 ET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32M PARALLEL 64F... |
MT28F320J3RG-11 ET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32M PARALLEL 56T... |
MT28F640J3FS-115 ET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 64F... |
MT28F640J3RG-115 ET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 56T... |
MT28F004B3VG-8 B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B3VG-8 B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B3VG-8 BET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B3VG-8 BET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B3VG-8 T | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B3VG-8 T TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B3VG-8 TET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B3VG-8 TET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VG-8 B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VG-8 BET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VG-8 BET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VG-8 T | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VG-8 T TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VG-8 TET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VG-8 TET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VP-8 T | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VP-8 T TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F008B3VG-9 B | Micron Techn... | -- | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 BET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 BET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 T | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 T TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 TET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 TET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VP-9 B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VP-9 B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B5VG-8 B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B5VG-8 B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B5VG-8 BET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B5VG-8 BET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B5VG-8 T | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B5VG-8 T TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...