Allicdata Part #: | MT28F008B3VG-9TET-ND |
Manufacturer Part#: |
MT28F008B3VG-9 TET |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 8M PARALLEL 40TSOP I |
More Detail: | FLASH - NOR Memory IC 8Mb (1M x 8) Parallel 90ns ... |
DataSheet: | MT28F008B3VG-9 TET Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 8Mb (1M x 8) |
Write Cycle Time - Word, Page: | 90ns |
Access Time: | 90ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 40-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 40-TSOP I |
Base Part Number: | MT28F008B3 |
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Memory devices are computer hardware components used for storing information for later use. One of the most common types of memory devices is the MT28F008B3VG-9 TET, which is a NAND Flash memory type, typically used to store digital data. It is a non-volatile memory which means the contents of memory are retained even when the power is turned off. The MT28F008B3VG-9 TET contains sixteen million flash memory cells divided into sixteen blocks.
The MT28F008B3VG-9 TET can be found in a variety of tools and applications, including: portable storage devices such as USB thumb drives and memory cards; digital cameras, audio players, and video cameras; embedded systems; and portable gaming systems. It is also used in a wide variety of industrial and automotive applications.
The MT28F008B3VG-9 TET includes a controller allowing the device to be managed and accessed directly. This degree of control is much higher than is available in other types of memory devices such as hard disk drives or random access memory. Control of the TET provides the user with much higher control over the memory operation and can help to increase efficiency and performance.
The MT28F008B3VG-9 TET also has some characteristics that make it different from other NAND Flash devices. For example, one aspect of the memory is its uniform block size of 8K pages. This fixed block size provides much better scalability when compared to more flexible devices. Furthermore, the TET includes two bits per cell for error correction, which can help improve the reliability of the memory.
The working principle of MT28F008B3VG-9 TET is based on the principle of electrical charge trapping. A single cell in the device is made up of two floating gate transistors, the source and the drain. A voltage applied to the control gate can cause an electrical charge to be trapped on the floating gate. This charge represents a data bit, and can be read without changing the charge stored.
The control gate also controls the write, erase and verify operations in the TET. An erase operation eliminates the charge stored on the gate, and a write operation adds a new charge to the gate. The verify process is used to make sure the charge stored is in the expected range, and can be used to detect data problems.
In summary, the MT28F008B3VG-9 TET is an advanced type of NAND Flash memory typically used to store digital data. Its control gate and size allow for greater scalability and reliability, while its uniform block size makes it easier to program. Its working principle is based on the principle of electrical charge trapping and allows the user to read stored data without changing the charge.
The specific data is subject to PDF, and the above content is for reference
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