MT28F800B3SG-9 B TR

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MT28F800B3SG-9 B TR is part of the Memory product line, made by ESMT Company. It is a specialized Flash memory device designed for applications requiring high reliability and extended temperature operation from -40°C to 85°C. MT28F800B3SG-9 B TR has a memory capacity of 16 Megabits (2 Megabytes) and consists of four 4Mbit flash blocks arranged in an 8-bit-wide structure. The memory has an access time of 70ns and is organized as 2,097,152 by 8 for an 8-bit-wide device, and 1,048,576 by 16 for a 16-bit-wide device. The device can be accessed directly from the system bus with no external interface required.

Because of its high reliability and operating temperature range, MT28F800B3SG-9 B TR is well-suited for applications such as automotive electronics, power safety control, device monitoring, factory automation and industrial control systems, especially where continuous operation is required. MT28F800B3SG-9 B TR can also be used in space applications, where temperatures fluctuate widely.

MT28F800B3SG-9 B TR has two working principles. The first is to store data in memory blocks and flash memory locations. This allows the processor to access data in memory quickly and reliably. The second working principle is to store data in EEPROM locations. This feature allows the data to be stored and retrieved even when power is off, allowing data to be retained even on power cycles.

The flash memory in MT28F800B3SG-9 B TR is organized in four 1Mbit flash blocks, each of which is organized as 512k x 16 words. The memory is split into two logical banks called Bank0 and Bank1. Each bank has separate control registers and is accessible through separate control signals. The flash memory blocks have an access time of 70ns and are designed for read and write operations.

The memory structure of MT28F800B3SG-9 B TR uses an 8-bit-wide instruction bus and a 16-bit-wide data bus. The instruction bus is used for address and control commands. The data bus is used for data reads and writes.

The device also incorporates Error Correction Code (ECC) to provide data integrity in cases of errors caused by external or internal noise. The ECC is calculated for every 64 bytes of data. In addition, the device features an advanced write protection mechanism that allows the user to choose if the content of specific addresses are allowed to be written or not.

MT28F800B3SG-9 B TR has an advanced programmable architecture that allows the user to easily customize the device operation. The device supports various programmable voltage levels and clock frequencies and programmable bus widths. In addition, the device supports various erase and program operations, such as full chip erase, sector erase, and incremental erase.

In summary, MT28F800B3SG-9 B TR is an ideal Flash memory device for applications requiring high reliability and extended temperature operation. Its advanced features make it suitable for a wide variety of applications, such as automotive electronics, power safety control, device monitoring, factory automation and industrial control systems, and space applications. Its two working principles, one for storing data in memory blocks and one for storing data in EEPROM locations, allow for reliable and fast data access. In addition, its programmable features, such as voltage levels, clock frequencies and bus widths, along with its advanced write protection and ECC functions, make the device an ideal choice for a wide range of applications.

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