MT28F800B3SG-9 BET TR Allicdata Electronics
Allicdata Part #:

MT28F800B3SG-9BETTR-ND

Manufacturer Part#:

MT28F800B3SG-9 BET TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 8M PARALLEL 44SOP
More Detail: FLASH - NOR Memory IC 8Mb (1M x 8, 512K x 16) Para...
DataSheet: MT28F800B3SG-9 BET TR datasheetMT28F800B3SG-9 BET TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8, 512K x 16)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-SOIC (0.496", 12.60mm Width)
Supplier Device Package: 44-SOP
Base Part Number: MT28F800B3
Description

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The MT28F800B3SG-9 BET TR memory is a product of Micron Technology Inc. It is a 16-Mbit NOR Flash memory device designed for high-speed read operations. Its technology is based on the IBM/Micron Multi-Bit Cell (MBC) technology that enables fast reading of multiple memory cells in a single read cycle. The device contains an array of memory cells that are organized into 16,384 pages of 8 KB each. Each page can be individually addressed for reads or writes. The device also contains an 8-bit internal ECC engine that provides protection for any data written to the device. The device has two types of operation: Buried Address Decoding and Data Transfer.

The MT28F800B3SG-9 BET TR memory can be used in a number of applications, including storage and code execution. Its high-speed read operations makes it suitable for use in data storage applications, such as storing program code in embedded systems. The device can be used to store data in volatile memory applications, such as cell phones and PDAs. It can also be used in programmable logic designs. The device also offers protection from data corruption and allows data to be relocated without re-programming.

In terms of working principle, the MT28F800B3SG-9 BET TR memory is organized into two planes. The planes contain 32 blocks of memory cells that are grouped into 8-bit words. Each word of the cell is written and read through an 8-bit bus. the read operation involves three steps: the address decode, the data transfer and the data validation. The device uses two types of addresses- internal addresses and external addresses. Internal addresses are used for address decoding and data transfer, while external addresses are used for validation and data transfer. The address decode is performed by the internal address decoder. This identifies the block and page that holds the requested data. The data transfer is done by the data bus. The data is transferred to and from the memory array via the data bus. The data validation is done by the ECC engine. The ECC engine reads the data and calculates an ECC value. This is then compared against the read data to determine if it is valid.

The MT28F800B3SG-9 BET TR memory is a fast, reliable and flexible storage solution. Its built-in ECC engine provides protection against data corruption. Its high-speed read operation ensures fast reading of multiple memory cells in a single read cycle. The device is suitable for use in various applications, including storage and code execution. Its two types of operation, Buried Address Decoding and Data Transfer, make it an ideal choice for product designs. It is a reliable, high-performance memory solution for embedded devices.

The specific data is subject to PDF, and the above content is for reference

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