MT28F800B3WG-9 BET TR Allicdata Electronics
Allicdata Part #:

MT28F800B3WG-9BETTR-ND

Manufacturer Part#:

MT28F800B3WG-9 BET TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 8M PARALLEL 48TSOP I
More Detail: FLASH - NOR Memory IC 8Mb (1M x 8, 512K x 16) Para...
DataSheet: MT28F800B3WG-9 BET TR datasheetMT28F800B3WG-9 BET TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8, 512K x 16)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Base Part Number: MT28F800B3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is essential to almost every computer device, and it is used to store and quickly access data. MT28F800B3WG-9 BET TR, is a type of memory, which is specially designed to achieve high performance, high capacity and reliability. This article is going to discuss the application field and working principle of MT28F800B3WG-9 BET TR Memory.

Manufactures need to consider a lot of factors while designing memory, such as performance, capacity, endurance, cost and power etc. MT28F800B3WG-9 BET TR, as a type of memory, not only can meet the huge demand for performance and capacity, but also ensure the reliability and cost effectiveness. MT28F800B3WG-9 BET TR can provide 8GB of memory capacity, and the speed of data transfer is up to 400MHz. This high performance feature makes MT28F800B3WG-9 BET TR the ideal choice for many applications.

The application field of MT28F800B3WG-9 BET TR is rather wide. Compared with other types of memory, it is more suitable for demanding applications such as graphic processing, audio and streaming video applications, gaming consoles or applications with intensive multi-threaded computation. It is also particularly suitable for industrial automation and consumer electronics, where compact size and high reliability are important.

MT28F800B3WG-9 BET TR\'s working principle is based on the static nature of DRAM cells, which can store data electrically and hold them even when not powered. A DRAM cell is composed of a capacitor and a transistor. The capacitor stores electrical charges, while the transistor acts as a switch, which can turn the current on and off. The arrangement of transistors and capacitors form memory cells, which can store individual bits of data. When the memory is accessed, the transistors are used to switch the capacitors on and off. If a value of "1" is read, a charge is present, and if a value of "0" is read, the charge is absent.

MT28F800B3WG-9 BET TR also uses addressing techniques to read and write data. Whenever the memory is accessed, an address is provided, and the associated data is read or written. When read, the data is stored in a registers and when writing, the data is written to the specified address. This process is completed at high speed with complex addressing techniques.

By utilising the capacity, speed and low leakage, MT28F800B3WG-9 BET TR has been designed to deliver the high performance, capacity and reliability, which is required for many applications. Its wide application field and working principle make it a suitable choice for industrial automation and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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