MT28F800B3WG-9 BET Allicdata Electronics
Allicdata Part #:

MT28F800B3WG-9BET-ND

Manufacturer Part#:

MT28F800B3WG-9 BET

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 8M PARALLEL 48TSOP I
More Detail: FLASH - NOR Memory IC 8Mb (1M x 8, 512K x 16) Para...
DataSheet: MT28F800B3WG-9 BET datasheetMT28F800B3WG-9 BET Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8, 512K x 16)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Base Part Number: MT28F800B3
Description

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The MT28F800B3WG-9 is a type of memory that is used in various industries for a variety of specialized applications. It is a read and write memory chip that uses a 9-bit data bus and has varying storage capacity. It is part of the family of Flash memory devices which are based on a Single-Level Cell (SLC) NAND architecture.

The MT28F800B3WG-9 is classified as a non-volatile memory device. This means that the stored data will not be erased when the power is turned off or interrupted. It is used primarily in the aerospace and automotive industries due to its high reliability, operational stability, and durability. The device can withstand both high levels of vibration and temperature, making it ideal for use in harsh environments.

The design of the MT28F800B3WG-9 is based on the x8 architecture and it is fabricated using the 33nm CMOS process. It is a single chip/monolithic memory device which offers high speed operations. The device can achieve programmed read times of up to 29 nanoseconds and erase times of up to 68 nanoseconds.

The MT28F800B3WG-9 is capable of storing up to 8.0 Gigabit of data and can support features such as read-while-write operations and data caching. This makes it ideal for applications that require high performance storage, such as digital video recording systems and digital still cameras. It can also be used for applications that require high endurance, such as industrial and automotive applications.

The MT28F800B3WG-9 operates in three different modes: write, read and erase. In the write mode, data is written to the memory by applying specific voltage levels. The data is then stored in the cells and can be read back in the read mode. Data can also be erased in the erase mode. The device is capable of performing both erases and programming on the same cell, allowing for greater flexibility and improved endurance.

The MT28F800B3WG-9 is designed to interface with a host processor via an 8-bit bidirectional data bus, as well as two separate control/address/status buses. It also offers high speed operations, with a maximum transfer rate of 66Mb/s and an erase/program rate of up to 30Kb/s. The device also offers lower power consumption and improved performance compared to its predecessors.

In conclusion, the MT28F800B3WG-9 is a memory device that is used for various specialized applications in various industries. It is a non-volatile memory that offers high speed operations and can support read-while-write operations and data caching. It is designed to interface with a host processor via an 8-bit bidirectional data bus and two separate control/address/status buses, offering lower power consumption and improved performance than other similar devices. It can withstand both high levels of vibration and temperature, making it ideal for use in harsh environments.

The specific data is subject to PDF, and the above content is for reference

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