Allicdata Part #: | MT28HL64GRBA6EBL-0GCT-ND |
Manufacturer Part#: |
MT28HL64GRBA6EBL-0GCT |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | NOR FLASH 1GX64 PLASTIC PBF TLGA |
More Detail: | Memory IC |
DataSheet: | MT28HL64GRBA6EBL-0GCT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MT28HL64GRBA6EBL-0GCT is classified as Memory. It is an {S}SDRAM device with embedded error checking and correction (ECC) capabilities that make it suitable for a range of applications needing extended temperature and data protection. In this article, we will explore its application field and working principle.
First of all, the MT28HL64GRBA6EBL-0GCT is used in factory automation and computer peripherals, such as RFID tracking and control systems. It helps in providing real-time data collection, analysis, and decision-making capabilities for automation systems. This helps in improving factory productivity and making the entire production process more efficient. Another use case for it is in industrial computer systems where it helps in providing high-end reliability for data storage and manipulation.
The device has a 72-bit ECC redundancy, which is a fundamental feature to ensure data security and integrity. It reduces possibility of undetected single-bit errors by providing an extra layer of protection. In addition to that, it is available with extended temperature range which means it can operate in extreme conditions. It comes with a number of features like cycle-by-cycle ECC, data masking and padding, ECC read/write protection, and collision detection. All these features make it suitable for a variety of applications that require reliable and secure data storage and manipulation.
The working principle of the device is based on synchronous dynamic random-access memory (SDRAM). It works on the synchronous notion where the process of reading or writing to the memory cells is synchronized with the memory clock. It can process one word in two clocks and can be used for data transfers between two points. Apart from that, the device also uses a pre-charge circuit to support data read operations. The pre-charge feature allows the user to pre-charge the memory device before any operation occurs. This feature helps in improving the performance of the device, thus reducing power consumption and improving data integrity.
The MT28HL64GRBA6EBL-0GCT is a robust and secure memory device that can be used for a variety of applications. It is built for extended temperature operations and has ECC redundancy features that make it suitable for industrial computer systems. It is a synchronous DRAM device that uses pre-charge feature to reduce power consumption. All these features make it a secure and reliable memory device suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MT28EW256ABA1HPC-0SIT | Micron Techn... | 3.12 $ | 3165 | IC FLASH 256M PARALLEL 64... |
MT28F128J3FS-12 ET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 64... |
MT28F128J3RG-12 ET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 56... |
MT28F320J3FS-11 ET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32M PARALLEL 64F... |
MT28F320J3RG-11 ET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32M PARALLEL 56T... |
MT28F640J3FS-115 ET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 64F... |
MT28F640J3RG-115 ET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 56T... |
MT28F004B3VG-8 B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B3VG-8 B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B3VG-8 BET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B3VG-8 BET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B3VG-8 T | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B3VG-8 T TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B3VG-8 TET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B3VG-8 TET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VG-8 B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VG-8 BET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VG-8 BET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VG-8 T | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VG-8 T TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VG-8 TET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VG-8 TET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VP-8 T | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F004B5VP-8 T TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 40TS... |
MT28F008B3VG-9 B | Micron Techn... | -- | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 BET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 BET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 T | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 T TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 TET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VG-9 TET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VP-9 B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B3VP-9 B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B5VG-8 B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B5VG-8 B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B5VG-8 BET | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B5VG-8 BET TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B5VG-8 T | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
MT28F008B5VG-8 T TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 40TS... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...