MT35XU512ABA1G12-0AAT Allicdata Electronics
Allicdata Part #:

MT35XU512ABA1G12-0AAT-ND

Manufacturer Part#:

MT35XU512ABA1G12-0AAT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: SERIAL NOR SLC 64MX8 TBGA
More Detail: Memory IC
DataSheet: MT35XU512ABA1G12-0AAT datasheetMT35XU512ABA1G12-0AAT Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: *
Part Status: Active
Description

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The MT35XU512ABA1G12-0AAT is a type of DRAM technology that is commonly used in embedded systems. It is an upgradable and dynamically reconfigurable single-chip DDR4 memory module. It features a 512 MB storage capacity and is positioned as a high-performance, cost-effective memory solution for industrial, automotive, media and computer applications. This DRAM features a low-power and energy-efficient design that provides a high level of flexibility and integration.

The MT35XU512ABA1G12-0AAT is suitable for applications in a wide range of embedded systems. It is ideally suited for use in portable media players, digital cameras, smartphones, gaming consoles, medical imaging systems, automotive and industrial safety systems. Additionally, it can be used in applications that require high performance, high density and low power consumption. This small form factor DRAM module is capable of running at up to 2400 MT/s and is equipped with an advanced error correction algorithm that offers improved data integrity and reliability.

The primary working principle behind the MT35XU512ABA1G12-0AAT is dynamic random access memory (DRAM). DRAM is the most commonly used type of random access memory. It is based on the storage and retrieval of data stored in memory cells. Unlike other memory technologies, such as SRAM, DRAM is a volatile memory, meaning data stored in it will be lost when power is removed. The MT35XU512ABA1G12-0AAT uses a specially designed Cell Array Architecture (CA), which enables high performance while maintaining low power consumption.

The MT35XU512ABA1G12-0AAT features a DDR4 interface, which provides increased speeds and bandwidth for data transfers. It is capable of operating at up to 2400 MT/s and is equipped with an advanced error correction algorithm for improved data integrity and reliability. The integrative architecture is designed to support reliable write operations from both the processor and memory controller to the memory module. Furthermore, it is also designed to support advanced applications, such as dual-channel configuration, multi-threaded and multi-channel modes.

The MT35XU512ABA1G12-0AAT is a cost-effective and high-performance memory solution for embedded systems. It features a 512MB storage capacity, low-power and energy-efficient design that supports 2400MT/s and advanced error correction. This DRAM module is suitable for use in portable media players, digital cameras, medical imaging systems, automotive and industrial safety systems, as well as other embedded applications that require high performance, high density and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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