MT35XL256ABA1G12-0AAT

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MT35XL256ABA1G12-0AAT is a 256Mbit (32MB) NAND-type flash memory, one of a range of products available from the Micron Technology family of storage solutions. The MT35XL256ABA1G12-0AAT is suitable for smaller and medium sized applications, including automotive, medical and industrial, and many other embedded applications. It is also suitable for booting operating systems and storing other software related data in many types of systems.The MT35XL256ABA1G12-0AAT is a non-volatile device which enables fast write and read operations. This device conforms to the industry-standard 8-pin SOIC-N package and is capable of providing up to 1.5V of VCC supply voltage. The MT35XL256ABA1G12-0AAT operates at an operating frequency of 132 MHz and can handle commands such as read, program, erase, Reset and Status Register Set.The MT35XL256ABA1G12-0AAT can also perform 8-bit or 16-bit parallel data transfers and a 2-bit or 4-bit ECC (Error Correction Code) can be enabled. It also has a flexible or remap program feature, which can be used to evenly distribute data in multiple planes of the same page. The device can operate at temperature ranges of -40°C to +105°C.The MT35XL256ABA1G12-0AAT supports modern NAND Flash memory technologies, including 16-bit ONFI, Toggle and Easy ONFI. ONFI (Open NAND Flash Interface) can transfer data at up to 133MByte/sec and can support up to 4KBytes I/O cycles. The 16-bit ONFI device has access time of 25ns/page and Toggle-mode device has access time of 15ns/page. Easy ONFI is an industry-standard that allows for accelerated programming time. The working principle of the MT35XL256ABA1G12-0AAT is based on “floating gate” non-volatile memory cells. The “floating gate” consists of a thin layer of highly stable oxide between the underlying media and the control gate. In MT35XL256ABA1G12-0AAT, charge is injected by an electric field into the floating gate, which changes the threshold voltage (Vth) at which the cells are read and written. The charge stored in the floating gate can remain there for years, making MT35XL256ABA1G12-0AAT a reliable form of non-volatile memory.The MT35XL256ABA1G12-0AAT is a highly reliable storage device, which can store data over extended period of time without degrading the data quality. The device is the ideal choice for applications where large capacities of data need to be stored and transferred rapidly and securely. The MT35XL256ABA1G12-0AAT is also ideal for applications that need to access flash memory in a rapid manner, with low latency and high performance. This device has extended erase counts for its multi-plane memory array, ensuring that it can reliably store data with less risk of data corruption. With its smart erase operations, MT35XL256ABA1G12-0AAT can cut down on the number of erase operations, resulting in reduced power consumption and faster access times. To ensure the highest performance and data integrity, the MT35XL256ABA1G12-0AAT supports various ECC (Error Correction Code) schemes, including 2-bit and 4-bit ECC. This ensures that any read and write operations executed by the device are accurate and reliable.In conclusion, the MT35XL256ABA1G12-0AAT is an ideal choice for various types of applications, such as automotive, medical, and industrial. It is a reliable, high-performance storage device that has extended erase counts, low latency, and fast write and read operations. It also supports for various ECC schemes which provide high levels of data integrity. This makes MT35XL256ABA1G12-0AAT an ideal choice for applications where data needs to be stored and accessed quickly and securely.

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