Allicdata Part #: | MT35XU01GBBA2G12-0SITTR-ND |
Manufacturer Part#: |
MT35XU01GBBA2G12-0SIT TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | SERIAL NOR SLC 128MX8 TBGA DDP |
More Detail: | Memory IC |
DataSheet: | MT35XU01GBBA2G12-0SIT TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
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Memory is essential for computing systems. In this article, we will be discussing the application field and working principle of the MT35XU01GBBA2G12-0SIT TR memory.The MT35XU01GBBA2G12-0SIT TR memory is an enterprise-grade, SATA-based, solid-state drive (SSD) with an endurance rating of up to 1 Drive Write per Day (DWPD). This SSD has a 6Gb/s SATA interface and is available in capacities of up to 2TB. The MT35XU01GBBA2G12-0SIT TR memory has a sequential read speed of up to 560MB/s and a sequential write speed of up to 520MB/s. The MT35XU01GBBA2G12-0SIT TR memory is especially suitable for enterprise storage systems, data analytics and virtualized applications. The 6Gb/s SATA interface and the high grading performance makes this memory an ideal choice for mission-critical applications. It is also suitable for high-speed data recording for applications such as surveillance systems, industrial automation and automotive infotainment systems.The MT35XU01GBBA2G12-0SIT TR memory has a number of features which make it an efficient and reliable memory. It has the Flash-transistor switch (TR) architecture which allows it to achieve fast-write access times and minimize latency while using only limited power. The TR technology used by this memory allows the creation of separate “write zones” which can limit wear on certain blocks and extend the lifetime of the memory.The MT35XU01GBBA2G12-0SIT TR memory also has an advanced error correction system which is able to detect and fix any errors before they can become a problem. This is especially important for mission-critical applications where any errors could be disastrous. This memory also has self-encryption technology and power-loss protection which helps to ensure data integrity and prevent data loss in the event of a power outage.The MT35XU01GBBA2G12-0SIT TR memory also offers full endurance for the life of the drive, meaning that it can perform a total of 1 DWPD over its lifetime. This makes it suitable for long-term storage of critical data which must remain intact even after years of use.The MT35XU01GBBA2G12-0SIT TR memory is an ideal choice for enterprise storage systems and other mission-critical applications. It has a reliable set of features which make it an efficient and secure choice for long-term storage, and its fast read and write speeds make it suitable for a wide range of applications. The Flash-transistor switch architecture ensures maximum performance while using minimal power, and the advanced error correction system and power-loss protection ensure maximum data integrity.
The specific data is subject to PDF, and the above content is for reference
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MT35XL02GCBA3G12-0SIT TR | Micron Techn... | 0.0 $ | 1000 | SERIAL NOR SLC 256MX8 TBG... |
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MT35XU01GBBA2G12-0SIT TR | Micron Techn... | 0.0 $ | 1000 | SERIAL NOR SLC 128MX8 TBG... |
MT35XU01GBBA3G12-0SIT TR | Micron Techn... | 0.0 $ | 1000 | SERIAL NOR SLC 128MX8 TBG... |
MT35XU01GBBA4G12-0SIT TR | Micron Techn... | 0.0 $ | 1000 | SERIAL NOR SLC 128MX8 TBG... |
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MT35XU02GCBA4G12-0SIT TR | Micron Techn... | 0.0 $ | 1000 | SERIAL NOR SLC 256MX8 TBG... |
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