MT41J128M16HA-187E:D

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Base Part Number:	MT41J128M16
Supplier Device Package:	96-FBGA (9x14)
Package / Case:	96-TFBGA
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 95°C (TC)
Voltage - Supply:	1.425 V ~ 1.575 V
Memory Interface:	Parallel
Access Time:	13.125ns
Series:	--
Clock Frequency:	533MHz
Memory Size:	2Gb (128M x 16)
Technology:	SDRAM - DDR3
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tray

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MT41J128M16HA-187E:D Application Field and Working Principle

The MT41J128M16HA-187E:D is a DDR3 memory integrated circuit used for memory applications. It is a high-performance and cost-efficient memory chip that combines a low-power design with features such as on-chip ECC, wear-leveling, and power down modes. The chip is composed of four x16 DDR3 devices and features a 667-MHz clock rate, x8/x16 lane configurations, support for interleaving up to four ranks, and a data transfer rate of 10.66 Gb/s/pin.

Applications of MT41J128M16HA-187E:D

The MT41J128M16HA-187E:D is used in a variety of computing and telecommunications applications. In computers, it is an ideal memory device for notebooks, desktops, server, and workstations. It is highly suitable for applications such as gaming and virtual reality, as it offers excellent performance in data-intensive operations. In the telecommunications sector, the MT41J128M16HA-187E:D is used for networking, base station memory, and storage applications.

Working Principle

The MT41J128M16HA-187E:D is a double data rate (DDR3) synchronous dynamic random-access memory (SDRAM) chip. It is designed to operate at 667 MHz, which is twice the rate of conventional DDR2 memory. It can transfer up to 10.66 Gb/s per pin and is compliant with the JEDEC DDR3 standard.The chip functions by storing bits of data in an array of memory cells, which are arranged in multiple rows and columns. The data is read and written to the cells using addresses, which are assigned to each cell. When the voltage changes across the chip, data can be transferred between the memory cells and the chip’s output pins.The chip also features an internal buffer and error-correction code (ECC) to ensure data integrity. The buffer is used to store data prior to it being read or written to the memory cells, and the ECC is used to detect and correct any errors in the data before it is written to the cells.

Conclusion

The MT41J128M16HA-187E:D is a high-performance and cost-efficient memory chip that is suitable for applications in computers and telecommunications. It is a double data rate (DDR3) SDRAM designed to operate at 667 MHz, with a data transfer rate of up to 10.66 Gb/s/pin. The chip also features an internal buffer and error-correction code (ECC) to ensure data integrity.

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