
Allicdata Part #: | MT41K128M16JT-107G:KTR-ND |
Manufacturer Part#: |
MT41K128M16JT-107G:K TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 2G PARALLEL 96FBGA |
More Detail: | SDRAM - DDR3L Memory IC 2Gb (128M x 16) Parallel 9... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | -- |
Base Part Number: | MT41K128M16 |
Supplier Device Package: | 96-FBGA (8x14) |
Package / Case: | 96-TFBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 95°C (TC) |
Voltage - Supply: | 1.283 V ~ 1.45 V |
Memory Interface: | Parallel |
Access Time: | 20ns |
Series: | -- |
Clock Frequency: | 933MHz |
Memory Size: | 2Gb (128M x 16) |
Technology: | SDRAM - DDR3L |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Memory is a crucial part of modern computing systems. There are various types of memory and each type has its own application field and working principles. This article will focus on MT41K128M16JT-107G:K TR, discussing its application field and working principles.
Application of MT41K128M16JT-107G:K TR
MT41K128M16JT-107G:K TR is a type of DDR3 SDRAM. This type of memory is widely used in many applications such as personal computers, gaming consoles, routers, and embedded systems. Its applications range from high-performance gaming systems to low-power embedded systems. Due to its high density and low power consumption, it is ideal for applications that require a large amount of memory, but do not need the power of a more expensive type of memory.
The Working Principle of MT41K128M16JT-107G:K TR
The MT41K128M16JT-107G:K TR is a type of Synchronous Dynamic Random Access Memory, or SDRAM. This type of memory works by transferring data between its internal memory cells and an external data source. This transfer is done by using an input signal that is timed to match the timing requirements of the external computer. A clock signal is then used to synchronize the transfer of data. The clock signal is generated by a controlling device, such as a microcontroller, and is sent to the memory chip to activate each cell.
Once activated, each of the internal cells can either read or write data to or from the external source. This process of sending and receiving data is known as synchronous memory operation or CAS latency. The CAS latency is a measure of the time it takes for the data to be processed and stored in the memory chip\'s internal cells.
Within the memory chips, each cell is composed of multiple transistors. These transistors can switch between two states: either conducting or non-conducting. This switching between states is used to store data and is what allows the memory chip to store data for a given period of time. The contents of the memory cells can then be read or written by the external device, depending on the type of work that needs to be done.
Conclusion
In conclusion, MT41K128M16JT-107G:K TR is a type of DDR3 SDRAM that is used in many applications. It has a high density and low power consumption, making it a cost-effective choice for many applications. Its working principle is based on synchronous memory operation and its internal cells are composed of transistors that can switch between two states.
Overall, MT41K128M16JT-107G:K TR is a versatile and cost-effective type of memory that is well suited for many applications. Its working principle and application field makes it an ideal choice for many systems and its high density and low power consumption make it a great choice for those applications that require a large amount of memory.
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MT41J256M8DA-125:K TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41K512M4DA-125:K | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
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MT41J256M8JE-187E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 82FBG... |
MT41K256M16TW-107 M AIT:P TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41K512M16HA-107:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT41J512M4HX-187E:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J64M16JT-15E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 96FBG... |
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MT41J256M8DA-093:K | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J512M8RH-093:E | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT41K256M8DA-125:M | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J256M16HA-125:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
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MT41K512M16HA-125 AIT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
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