MT41K256M16TW-107 AAT:P TR

Memory is the most fundamental part of computer system which is used to store large amount of data and information. It is divided into two major categories – volatile memory and non-volatile memory. Most memory is made up of semi-conductor materials such as silicon or gallium arsenide. The MT41K256M16TW-107 AAT:P TR is an ultra-low-cost DRAM memory device which combines high density, low power and low cost in one package.The MT41K256M16TW-107 AAT:P TR is a 16-Mbit dynamic random access memory (DRAM). It is designed to provide maximum system performance and reliability in the most cost effective package configuration. The device has 256Kx16 organization, packaged in a 48-pin thin small outline package (TSOP-I) and includes an external I/O register and refresh counter. The device utilizes a highly reliable three-level cell design for power efficiency and low access time. The applications fields of MT41K256M16TW-107 AAT:P TR include embedded systems, mobile and portable devices, automotive systems, and other applications that require low power and low cost memory devices. It is also suitable for use in high-end servers, communication systems, and PC platforms, as it offers high performance and robustness at a low power and cost. The device operates at a clock frequency of up to 200 MHz and features a wide range of read and write operations. It has an operating temperature range of -40°C to +85°C and a storage temperature range of -55°C to +125°C. It also features an internal memory controller which supports read and write operations for all memory locations.The MT41K256M16TW-107 AAT:P TR is a multi-level cell (MLC) DRAM that uses three-level cells (TLC) to store data instead of two levels, providing higher density and performance. The MLC technology enables three bits to be stored in a single memory cell, instead of the two bits stored in the conventional two-level cell (SLC). This increases the density of the memory, while requiring less energy per cell to store data. The MLC DRAM also offers improved write performance and power efficiency by allowing the memory cells to transition between two thresholds which represent two logic states. This reduces the amount of energy required to divide write operations into two separate steps. In addition, the MLC device features Error Correction Code (ECC) to detect and restore errors due to bit errors or memory-cell corruption. The ECC uses an algorithm that scans the memory for specific error detection and correction bits. When an error is detected, the algorithm uses the stored ECC data to reconstruct the original data.Overall, the MT41K256M16TW-107 AAT:P TR is a high performance, low power and low cost DRAM device suitable for applications that require reliable and robust memory. The device offers high density, low power and low cost, making it ideal for a variety of embedded, mobile, automotive and enterprise applications.

MT41K128M8JP-15E:G	Micron Techn...	--	1000	IC DRAM 1G PARALLEL 78FBG...
MT41J64M16JT-15E XIT:G	Micron Techn...	0.0 $	1000	IC DRAM 1G PARALLEL 96FBG...
MT41K64M16TW-107 AIT:J TR	Micron Techn...	4.19 $	6000	IC DRAM 1G PARALLEL 96FBG...
MT41J128M8HX-15E:D TR	Micron Techn...	0.0 $	1000	IC DRAM 1G PARALLEL 78FBG...
MT41J128M16HA-125G:D	Micron Techn...	--	1000	IC DRAM 2G PARALLEL 96FBG...
MT41J64M16JT-125:G TR	Micron Techn...	0.0 $	1000	IC DRAM 1G PARALLEL 96FBG...
MT41J256M16RE-15E IT:D	Micron Techn...	--	1000	IC DRAM 4G PARALLEL 96FBG...
MT41K512M8DA-107 AAT:P TR	Micron Techn...	0.0 $	1000	IC DRAM 4G PARALLEL 78FBG...
MT41J128M8JP-15E:G TR	Micron Techn...	0.0 $	1000	IC DRAM 1G PARALLEL 78FBG...
MT41K512M8DA-107 AIT:P TR	Micron Techn...	0.0 $	1000	IC DRAM 4G PARALLEL 78FBG...
MT41K64M16TW-125:J	Micron Techn...	0.0 $	1000	IC DRAM 1G PARALLEL 800MH...
MT41J256M4HX-15E:D TR	Micron Techn...	0.0 $	1000	IC DRAM 1G PARALLEL 78FBG...
MT41J128M16JT-125:K	Micron Techn...	--	1000	IC DRAM 2G PARALLEL 96FBG...
MT41J256M8DA-125:K TR	Micron Techn...	0.0 $	1000	IC DRAM 2G PARALLEL 78FBG...
MT41K512M4DA-125:K	Micron Techn...	0.0 $	1000	IC DRAM 2G PARALLEL 78FBG...
MT41J64M16JT-15E IT:G TR	Micron Techn...	0.0 $	1000	IC DRAM 1G PARALLEL 96FBG...
MT41K1G8THE-15E:D	Micron Techn...	0.0 $	1000	IC DRAM 8G PARALLEL 78FBG...
MT41K256M4DA-107:J	Micron Techn...	0.0 $	1000	IC DRAM 1G PARALLEL 78FBG...
MT41K512M8DA-107 AIT:P	Micron Techn...	11.68 $	235	IC DRAM 4G PARALLEL 78FBG...
MT41K512M16TNA-125 IT:E	Micron Techn...	0.0 $	1000	IC DRAM 8G PARALLEL 96FBG...
MT41K256M16HA-107G:E	Micron Techn...	--	1000	IC DRAM 4G PARALLEL 96FBG...
MT41K512M16HA-125 IT:A	Micron Techn...	82.08 $	1000	IC DRAM 8G PARALLEL 96FBG...
MT41K256M16LY-093:N	Micron Techn...	0.0 $	1000	IC DRAM 4G PARALLEL 1067M...
MT41J256M16HA-107:E	Micron Techn...	0.0 $	1000	IC DRAM 4G PARALLEL 96FBG...
MT41J256M8JE-187E:A	Micron Techn...	0.0 $	1000	IC DRAM 2G PARALLEL 82FBG...
MT41K256M16TW-107 M AIT:P TR	Micron Techn...	0.0 $	1000	IC DRAM 4G PARALLEL 96FBG...
MT41K512M16HA-107:A	Micron Techn...	0.0 $	1000	IC DRAM 8G PARALLEL 96FBG...
MT41J512M4HX-187E:D	Micron Techn...	0.0 $	1000	IC DRAM 2G PARALLEL 78FBG...
MT41J64M16JT-15E:G TR	Micron Techn...	0.0 $	1000	IC DRAM 1G PARALLEL 96FBG...
MT41K1G4THV-15E:M	Micron Techn...	0.0 $	1000	IC DRAM 4G PARALLEL 78FBG...
MT41J128M8JP-15E AIT:G TR	Micron Techn...	0.0 $	1000	IC DRAM 1G PARALLEL 78FBG...
MT41J256M8DA-093:K	Micron Techn...	0.0 $	1000	IC DRAM 2G PARALLEL 78FBG...
MT41J512M8RH-093:E	Micron Techn...	--	1000	IC DRAM 4G PARALLEL 78FBG...
MT41K256M8DA-125:M	Micron Techn...	--	1000	IC DRAM 2G PARALLEL 78FBG...
MT41J256M16HA-125:E TR	Micron Techn...	0.0 $	1000	IC DRAM 4G PARALLEL 96FBG...
MT41K2G4TRF-107:E	Micron Techn...	0.0 $	1000	IC DRAM 8G PARALLEL 78FBG...
MT41K512M16HA-125 AIT:A TR	Micron Techn...	0.0 $	1000	IC DRAM 8G PARALLEL 96FBG...
MT41K1G8TRF-125:E TR	Micron Techn...	0.0 $	1000	IC DRAM 8G PARALLEL 78FBG...
MT41K256M4JP-15E:G TR	Micron Techn...	0.0 $	1000	IC DRAM 1G PARALLEL 78FBG...
MT41K1G4DA-107:P	Micron Techn...	--	996	IC DRAM 4G PARALLEL 78FBG...