
Allicdata Part #: | MT41J64M16JT-15EXIT:G-ND |
Manufacturer Part#: |
MT41J64M16JT-15E XIT:G |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 1G PARALLEL 96FBGA |
More Detail: | SDRAM - DDR3 Memory IC 1Gb (64M x 16) Parallel 667... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR3 |
Memory Size: | 1Gb (64M x 16) |
Clock Frequency: | 667MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.425 V ~ 1.575 V |
Operating Temperature: | -40°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 96-TFBGA |
Supplier Device Package: | 96-FBGA (8x14) |
Base Part Number: | MT41J64M16 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
As technology advances, there are a variety of memory types available for use in today’s devices. The MT41J64M16JT-15E XIT:G is a type of memory that is particularly well-suited for use in challenging, mission-critical applications. This type of memory provides a stable platform with a variety of features to enhance speed and reliability.
The MT41J64M16JT-15E XIT:G belongs to the category of memory known as “Static Random Access Memory”, or SRAM. SRAM is a type of memory that is non-volatile, meaning that it does not need electricity to retain data. This type of memory is ideal for use in the most complex applications, such as aerospace, defense, and medical applications. In addition to being non-volatile, it has several other features that make it valuable in these applications.
The MT41J64M16JT-15E XIT:G has an advanced architecture, which allows for ultra-high speeds and enhanced reliability. As part of this advanced architecture, it features an array of eight banks of eight megabytes per bank. This allows for a total of 64 megabytes of storage. The high-speed operation of the MT41J64M16JT-15E XIT:G also enables its use in applications which require fast data processing and retrieval times.
The MT41J64M16JT-15E XIT:G is also very efficient in terms of power consumption. It is capable of consuming 10 percent less power than other SRAM devices. This efficiency makes the MT41J64M16JT-15E XIT:G suitable for use in applications where size and power consumption are critical. In addition, the MT41J64M16JT-15E XIT:G can operate from -40°C to + 85°C, making it suitable for a variety of operating temperatures.
Given these features and advantages, the MT41J64M16JT-15E XIT:G memory is ideal for use in a broad range of applications. It is suitable for use both in consumer and enterprise applications, ranging from basic consumer electronics up to mission-critical applications. The device can be applied to medical, automotive, communications, consumer, industrial, and military applications. In addition, the device is suitable for use in demanding handhelds, test and measurement equipment, and other mobile computing and connected embedded applications.
In addition to its wide range of applications, the MT41J64M16JT-15E XIT:G also provides an exceptional level of performance. It supports an asynchronous bus speed and refresh features, allowing for faster data transfer and retrieval times. The device is also designed for up to 85°C maximum junction temperature, making it suitable for use in high temperature environments, such as automotive and aerospace applications.
The MT41J64M16JT-15E XIT:G is an advanced, high-performance memory device that can be used in a variety of challenging applications. It provides exceptional speed and reliability, while maintaining a low power consumption. The wide range of applications and superior performance of the MT41J64M16JT-15E XIT:G make it an ideal choice for a variety of mission-critical applications.
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MT41K512M8DA-107 AIT:P TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
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MT41J256M4HX-15E:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 78FBG... |
MT41J128M16JT-125:K | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 96FBG... |
MT41J256M8DA-125:K TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41K512M4DA-125:K | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J64M16JT-15E IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 96FBG... |
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MT41K512M8DA-107 AIT:P | Micron Techn... | 11.68 $ | 235 | IC DRAM 4G PARALLEL 78FBG... |
MT41K512M16TNA-125 IT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT41K256M16HA-107G:E | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41K512M16HA-125 IT:A | Micron Techn... | 82.08 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
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MT41J256M16HA-107:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41J256M8JE-187E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 82FBG... |
MT41K256M16TW-107 M AIT:P TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41K512M16HA-107:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT41J512M4HX-187E:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J64M16JT-15E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 96FBG... |
MT41K1G4THV-15E:M | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT41J128M8JP-15E AIT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 78FBG... |
MT41J256M8DA-093:K | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J512M8RH-093:E | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT41K256M8DA-125:M | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 78FBG... |
MT41J256M16HA-125:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT41K2G4TRF-107:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT41K512M16HA-125 AIT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
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