MT41K1G8RKB-107:N TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - DDR3L
Memory Size:	8Gb (1G x 8)
Clock Frequency:	933MHz
Write Cycle Time - Word, Page:	--
Access Time:	20ns
Memory Interface:	Parallel
Voltage - Supply:	1.283 V ~ 1.45 V
Operating Temperature:	0°C ~ 95°C (TC)
Mounting Type:	Surface Mount
Package / Case:	78-TFBGA
Supplier Device Package:	78-FBGA (8x10.5)

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Memory MT41K1G8RKB-107:N TR

Memory is an important component of today’s electronic systems, and memory technology has evolved rapidly to meet the memory needs of applications ranging from simple consumer products to demanding high-end computing systems. MT41K1G8RKB-107:N TR is a DRAM module with 1GByte of DDR3 type memory and is part of a family of DRAM products. This article provides an overview of the application fields and working principle of MT41K1G8RKB-107:N TR.

Application Field

MT41K1G8RKB-107:N TR is a high performance, low power DRAM module with 1GByte of DDR3 type memory. It is suitable for a wide range of applications, including consumer electronics, networking, automotive, industrial and gaming applications, to name a few. It is particularly useful for applications where very fast access to large amounts of data is required, such as gaming, video streaming, content delivery and other data intensive applications.Due to its low power consumption and high performance characteristics, MT41K1G8RKB-107:N TR is also suitable for applications that require higher power efficiency and reliability. This includes embedded systems, high-performance computing (HPC) systems and aerospace applications. The module also has ECC capability, which allows for protection against single-bit errors and maintenance of data integrity.

Working Principle

The working principle of MT41K1G8RKB-107:N TR can be divided into two parts: dynamic random access memory (DRAM) and double data rate (DDR) technology.In dynamic random access memory (DRAM), data is stored in capacitors and accessed using thin-film transistors (TFTs). The process starts by applying a voltage to the memory cell using a transistor. This voltage will determine whether a bit is stored as a “0” or a “1”. When a row address is activated, a signal is sent to the addressed row of memory cells. When the columns are accessed, the voltage of the addressed cell will determine the bit stored. This process is repeated for every memory cell.The double data rate (DDR) technology in the MT41K1G8RKB-107:N TR module enables it to transfer data twice as fast as a single data rate DRAM module. This is achieved by utilizing both the rising and falling edges of a clock signal to transfer data. In essence, two bits of data are sent in each clock cycle, greatly increasing the data rate of the module.

Conclusion

The MT41K1G8RKB-107:N TR is a high performance, low power DRAM module with 1GByte of DDR3 type memory. It is suitable for a wide range of applications, including consumer electronics, networking, automotive, industrial and gaming applications. The module also has ECC capabilities to protect data against single bit errors and maintain data integrity. The working principle of the module relies on dynamic random access memory (DRAM) and double data rate (DDR) technology, which enables it to transfer data twice as fast as a single data rate DRAM module.

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