| Allicdata Part #: | MT41K256M16TW-107AAT:P-ND |
| Manufacturer Part#: |
MT41K256M16TW-107 AAT:P |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 4G PARALLEL 96FBGA |
| More Detail: | SDRAM - DDR3L Memory IC 4Gb (256M x 16) Parallel 9... |
| DataSheet: | MT41K256M16TW-107 AAT:P Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - DDR3L |
| Memory Size: | 4Gb (256M x 16) |
| Clock Frequency: | 933MHz |
| Write Cycle Time - Word, Page: | -- |
| Access Time: | 20ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.283 V ~ 1.45 V |
| Operating Temperature: | -40°C ~ 105°C (TC) |
| Mounting Type: | Surface Mount |
| Package / Case: | 96-TFBGA |
| Supplier Device Package: | 96-FBGA (8x14) |
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Memory is a critical component of a computer\'s hardware which is essential for data storage and software operations. One of the most popular memories used in various applications is the MT41K256M16TW-107 AAT:P. This article will delve into its application fields, working principles and features.
The MT41K256M16TW-107 AAT:P is a type of dynamic RAM (DRAM) that offers an increased density of storage compared to other types of DRAM. This memory is well-suited for applications in the industrial and military markets. Its high memory density is particularly advantageous for mission critical applications, where system reliability and stability are important. The MT41K256M16TW-107 AAT:P provides a good mix between cost and performance and is designed for use in extreme environments. Its use of "quad module packages" allows for easy installation in confined spaces.
The working principle of the MT41K256M16TW-107 AAT:P is based on the principles of dynamic RAM (DRAM). It stores data in a system of capacitors that maintain a level of electrical charge. When the data is sent to the DRAM, the charge of the capacitors is discharged and then recharged with the data. When the data is accessed or read, the charge is read and the data is sent out. The capacitors are not affected by power cuts, meaning that the data will remain stored even when the power is not available. This is the reason why DRAM memories are often used in applications where data integrity is important.
The MT41K256M16TW-107 AAT:P also has a number of features that make it suitable for various types of applications. It offers an operating temperature range of -55°C to +125°C, making it suitable for use in extreme temperatures. It also offers a "low power read" mode, which reduces power consumption during the memory\'s idle periods. This feature makes it well suited for applications that require long periods of inactivity. In addition, the MT41K256M16TW-107 AAT:P has an ultra-low power mode for even further power savings.
The MT41K256M16TW-107 AAT:P is currently used in a wide range of applications, from industrial automation systems to military defense systems. Its high memory density and “quad module packages” are particularly useful in military applications where space is limited. It is also used in a variety of other mission critical applications, such as aerospace, automotive and medical imaging, which require highly reliable and secure memory solutions. The MT41K256M16TW-107 AAT:P has also been used in consumer electronics, such as mobile phones and tablet computers, for improved performance and increased storage capacity.
In conclusion, the MT41K256M16TW-107 AAT:P is a versatile and reliable type of DRAM memory that offers a number of features that make it ideal for a wide range of applications. Its high memory density and low power requirements make it a popular choice for mission critical applications and consumer electronics. Its use of “quad module packages” is particularly advantageous for applications where space is limited.
The specific data is subject to PDF, and the above content is for reference
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| MT41J64M16JT-125:G | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 96FBG... |
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| MT41J64M16TW-093:J TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 96FBG... |
| MT41J128M16HA-15E IT:D | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 96FBG... |
| MT41K256M8DA-125 AIT:K TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78FBG... |
| MT41K256M16TW-107 AIT:P TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
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| MT41K512M8DA-093:P | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
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| MT41J128M8JP-15E:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 78FBG... |
| MT41K512M8DA-107 AIT:P TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
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MT41K256M16TW-107 AAT:P Datasheet/PDF