MT41K512M4HX-187E:D

Introduction

The MT41K512M4HX-187E:D is a dynamic random-access memory (DRAM) chip manufactured by Micron Technology, Inc. It is considered to be a high-performance memory that is designed to be used in next-generation mobile, computing, and consumer electronic applications.

The MT41K512M4HX-187E:D is a low-power DDR4 DRAM that utilizes advanced high-speed interfaces to deliver superior performance and low power consumption. It offers a wide array of features and options, making it well suited for a variety of applications like mobile phones, tablets and PCs.

Applications

The MT41K512M4HX-187E:D is designed for use in high-performance computers, server platforms, mobile devices, gaming consoles and other consumer electronics products. It is optimized to enable fast, efficient data access from small and large systems alike. This low-power DRAM offers a maximum data transfer rate of up to 2133 mega transfers per second (MT/s) and is optimized for compatibility with the latest double-data rate (DDR4) interfaces.

The MT41K512M4HX-187E:D is a two-rank device that operates at 1.2 volts and offers a high-bandwidth data transfer, which is essential for the latest generation of multimedia, experience-rich applications, such as mobile gaming, high-definition video streaming, and virtual reality. Additionally, the device offers improved signal integrity and thermals, reducing power and improving system stability.

Working Principle

The MT41K512M4HX-187E:D is a synchronous dynamic random access memory (SDRAM) device that is designed to operate asynchronously with the main processor. The device contains an array of 8-bit wide DRAM cells that are controlled by the device controller. The controller is responsible for issuing the commands and other signals necessary for reading and writing data to the memory array.

When the device is in operation, the controller sends out an address to the memory array. The address consists of a row and a column; the row address is used to select the row of memory for read or write operations, and the column address is used to select the column of memory for read or write operations. The address is sent to the memory array simultaneously, allowing for quick access to the data in the desired memory location.

Once the address is sent, the memory array will send the data to the controller, which will then send it to the processor. The data is then processed and the resulting operations are sent back to the memory array. The memory array will then store the new data accordingly and the process is complete.

Conclusion

The MT41K512M4HX-187E:D is a powerful DRAM from Micron Technology, Inc. that is designed to deliver high performance and low power consumption for next-generation mobile, computing, and consumer electronics applications. It offers a wide array of features and options, making it well suited for a variety of applications, and it utilizes advanced high-speed interfaces to deliver high-bandwidth data transfer. The device also utilizes a synchronous dynamic random access memory (SDRAM) design that operates asynchronously with the main processor, allowing for quick access to stored data.