MT44K32M18RB-107E:A TR Allicdata Electronics
Allicdata Part #:

MT44K32M18RB-107E:ATR-ND

Manufacturer Part#:

MT44K32M18RB-107E:A TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 576M PARALLEL 168BGA
More Detail: DRAM Memory IC 576Mb (32M x 18) Parallel 933MHz 8n...
DataSheet: MT44K32M18RB-107E:A TR datasheetMT44K32M18RB-107E:A TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: MT44K32M18
Supplier Device Package: 168-BGA
Package / Case: 168-TBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.28 V ~ 1.42 V
Memory Interface: Parallel
Access Time: 8ns
Series: --
Clock Frequency: 933MHz
Memory Size: 576Mb (32M x 18)
Technology: DRAM
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is a key part of any computer system. It stores data and instructions for the system to work with. Therefore, various types of memories are available in order to suit the needs of different applications. MT44K32M18RB-107E is a type of memory specifically designed for a particular application field, thermal degradation resistance, and a working principle that is distinct from other types of memory.

MT44K32M18RB-107E is a type of SDRAM (Synchronous Dynamic Random Access Memory) that is specifically designed to provide thermal degradation resistance. This means that the memory is capable of withstanding high temperatures up to 100°C, making it suitable for applications that require extended temperatures in extreme environments, such as aerospace and automotive industries. In addition, the memory features Error Correcting Code (ECC) that helps to protect the system against data corruption, making it an ideal choice for mission-critical applications.

The working principle of MT44K32M18RB-107E is based on synchronous DRAM technology, which allows memory cells to be accessed in a synchronous manner. The memory operates at a maximum speed of 533MHz and offers a large capacity of up to 64Mb. It uses a JEDEC-compliant interface for easy and cost-effective integration into various applications. Furthermore, the memory provides an advanced power-saving feature which improves system efficiency and reduces power consumption.

MT44K32M18RB-107E is a reliable and versatile type of SDRAM that is specifically designed to meet the needs of extreme environment applications. As it offers thermal degradation resistance, advanced power-saving capabilities and error protection, the memory is ideal for mission-critical applications. In addition, it provides a cost-effective and easy-to-integrate solution for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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