MT44K32M18RB-093E:B TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	DRAM
Memory Size:	576Mb (32M x 18)
Clock Frequency:	1067MHz
Write Cycle Time - Word, Page:	--
Access Time:	8ns
Memory Interface:	Parallel
Voltage - Supply:	1.28 V ~ 1.42 V
Operating Temperature:	0°C ~ 95°C (TC)
Mounting Type:	Surface Mount
Package / Case:	168-TBGA
Supplier Device Package:	168-BGA

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ORM

Introduction to MT44K32M18RB-093E:B TR Memory

The MT44K32M18RB-093E:B TR is a memory chip manufactured by Micron. It is a dynamic random access memory (DRAM) specifically designed for server and storage applications that require high speed, higher capacity, and low power consumption. The chip’s clock frequency is up to 1866 MHz and it supports a data transfer rate of up to 32.32 GB/s. The MT44K32M18RB-093E:B TR supports up to four ranks of x4 silicon and four ranks of x8 silicon. It also supports error correction code (ECC) which allows the memory to detect and correct single-bit memory errors. The MT44K32M18RB-093E:B TR is RoHS compliant and typically consumes 4W of power.

Application Field

The MT44K32M18RB-093E:B TR is a high-performance, low-power memory chip that is ideally suited for use in electronic equipment that requires high-speed operation and high-capacity memory. These include servers, storage servers, computer servers, RAID systems, and similar kinds of equipment. The chip is also well-suited for use in high-end embedded systems, such as routers, switches, VoIP phones, and so on, as well as data centers and mobile devices.Another area where the MT44K32M18RB-093E:B TR could be used is in medical imaging equipment. Its high-capacity and low-power nature make it well-suited to applications that require large amounts of data to be stored and quickly accessed with minimal latency.

Working Principle

The MT44K32M18RB-093E:B TR is based on a DDR4 synchronous DRAM technology and is organized as an array of x4 or x8 elements. Each of these elements is composed of 4 or 8 memory cells, which are controlled by the address and control lines.The DRAM operates in a row-column-access cycle. The address information is sent to the chip in two parts: the row address and the column address. The chip decodes these addresses and selects the desired row and column. The data stored in the selected row is then read from the column.The chip also supports error-correcting code (ECC) which allows it to detect and correct single-bit errors. This, combined with its high-speed operation and low-power consumption, make the MT44K32M18RB-093E:B TR an ideal choice for high-performance, high-capacity memory applications.

Conclusion

The MT44K32M18RB-093E:B TR is a dynamic random access memory chip designed for server and storage applications that require high speed, higher capacity, and low power consumption. It is well-suited for use in high-performance electronic equipment, such as servers, storage devices, and embedded systems, as well as medical imaging equipment. The chip\'s high speed, high capacity, and low power consumption, combined with its ECC support, make it an ideal choice for a wide range of applications that require reliable, high-performance memory.

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