MT44K32M18RB-107E:B Allicdata Electronics
Allicdata Part #:

MT44K32M18RB-107E:B-ND

Manufacturer Part#:

MT44K32M18RB-107E:B

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 576M PARALLEL 933MHZ
More Detail: DRAM Memory IC 576Mb (32M x 18) Parallel 933MHz 8n...
DataSheet: MT44K32M18RB-107E:B datasheetMT44K32M18RB-107E:B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (32M x 18)
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: --
Access Time: 8ns
Memory Interface: Parallel
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: 0°C ~ 95°C (TC)
Description

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The MT44K32M18RB-107E:B is a member of the JEDEC-standardized memory family. This type of memory is classified as a synchronous dynamic random access memory (SDRAM).

The MT44K32M18RB-107E:B is designed specifically as a PC memory and ensures superior performance compared to many other types of DRAM, most notably due to its high transfer rate. Additionally, the chip is built with a long-term data retention rate.

The MT44K32M18RB-107E:B’s typical application fields include the use in PCs, laptops, phones, tablets, and other digital devices with high performance standards. More specifically, this type of memory is best used in high-end applications, such as 3D gaming, virtual reality, high definition video streaming, and editing high-resolution images.

The MT44K32M18RB-107E:B memory works by employing four independent I/O banks to service all device pins and by dynamically scheduling access requests to minimize turning latency. This synchronous-dynamic memory type operates on the principle of “page locking,” meaning that it does not require “refreshing” to retain data, thus increasing data transfer speed.

The MT44K32M18RB-107E:B memory also features an improved four-bank pre-fetch architecture, built on the SDRAM fast-page mode access method. This allows the chip to read twice as much as a single bank-page. The page mode is accomplished by simply changing the column address, with the same row address signal applied. The typical access rate for such a memory type is in the range of 70 to 85ns.

The MT44K32M18RB-107E:B also has a few additional features such as write leveling and power saving modes that use interrupt signals to reduce the power consumed. Furthermore, the chip allows users to switch to advanced low-power operation modes while still maintaining data integrity thanks to its self-refresh feature.

Compared to conventional DRAMs, the MT44K32M18RB-107E:B memory provides higher performance and longer data retention rates. Additionally, its improved pre-fetching architecture, access rate and page mode capabilities, power saving modes, and self-refresh feature ensure that it is also an ideal choice for many high-end applications.

The specific data is subject to PDF, and the above content is for reference

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