MT44K16M36RB-107:A TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Modern technology, such as high-performance processors and large-capacity memory chips, has enabled a myriad of novel applications in many areas, from gaming to artificial intelligence, from autonomous vehicles to robotics. Memory design must also keep up with these technological advances, with both capacity and performance being tight requirements for memory reliability, performance and data integrity. The MT44K16M36RB-107 is one such memory solution, designed for high-performance applications that require a storage solution with higher capacity and reliability.

The MT44K16M36RB-107 belongs to the Memory category. It is a synchronous DRAM module that offers flexibility to its users. It is available in a 2Gx72 configuration, which means that it has two gigabytes of RAM, with 72-bit data width. It is an 8-bit DDR3 DRAM with a 16-bit wide interface, as well as an advanced DDR controller that allows for a maximum frequency of 800 MHz. It also includes an additional 256 Mb (memory) of NAND cache, which makes it faster than traditional DRAM solutions. This memory solution has been designed to meet the requirements of demanding applications, such as medical imaging, high performance computing and embedded storage.

The MT44K16M36RB-107 is designed to simplify the integration of high-performance memory solutions. As for the working principle, it employs a synchronous memory controller, which facilitates the communication between the x16-bit data bus, device and the interface logic. The controller handles the communication between the two controllers and ensures that data is transmitted correctly and efficiently. This simplifies the design process, as developers do not need to worry about the data transfer rate and the complexity of the circuitry. Moreover, the DRAM also permits multiple bank access, allowing for parallel access to data.

The MT44K16M36RB-107 is designed for a broad range of applications, from embedded storage to medical imaging. It has been used in a variety of applications, such as in automotive systems, design automation, industrial control and more. This memory solution provides outstanding reliability, with a maximum write speed of up to 800MHz, as well as improved data integrity, since it uses an optimized error-correction algorithm that detects and corrects single-bit errors. Moreover, its high-performance operation is also due to its on-board voltage regulator, which ensures that the memory has a stable supply of power.

The MT44K16M36RB-107 is an innovative memory solution that is perfect for applications that require a high-performance storage solution with an increased capacity, reliability and data integrity. Its advanced synchronous DRAM and 256Mb NAND cache guarantee optimized performance and improved efficiency of memory operations. Its on-board voltage regulator also makes it more reliable, as it helps stabilize the voltage supply. Its multiple bank access and on-board error-correction algorithm also make it versatile, allowing for improved data integrity and an efficient data transfer rate. In addition, its overall design simplifies the integration process for developers, making it a great choice for high-performance applications.

The specific data is subject to PDF, and the above content is for reference