MT44K32M18RB-125F:A Allicdata Electronics
Allicdata Part #:

MT44K32M18RB-125F:A-ND

Manufacturer Part#:

MT44K32M18RB-125F:A

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 576M PARALLEL 168BGA
More Detail: DRAM Memory IC 576Mb (32M x 18) Parallel 800MHz 8n...
DataSheet: MT44K32M18RB-125F:A datasheetMT44K32M18RB-125F:A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: MT44K32M18
Supplier Device Package: 168-BGA
Package / Case: 168-TBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.28 V ~ 1.42 V
Memory Interface: Parallel
Access Time: 8ns
Series: --
Clock Frequency: 800MHz
Memory Size: 576Mb (32M x 18)
Technology: DRAM
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an important part of the computer system, and its performance has a great impact on the whole system’s running speed. Memory can be divided into two categories: dynamic and static. MT44K32M18RB-125F:A is a type of static random-access memory (SRAM), with high-speed and low-power properties.

The application field of MT44K32M18RB-125F:A is mainly in embedded systems, to ensure the compatibility of various application components in an electronic system. For example, in automotive electronics, it is used to store system parameters, monitor operation status, and provide data access, to meet the demand of a high level of reliability, stability, and accuracy of automotive components. Besides, it is also a suitable choice for storage related applications such as networking communication and system control.

The working principle of MT44K32M18RB-125F:A is the same as that of the general static random-access memory (SRAM). It is composed of multiple rows of transistors, capacitors and other components. When power is on, these components hold the charge inside, and thus it is static. The capacitors hold a certain amount of electric charge, which represent the data stored in it. The data are read and written with the help of transistors, where the logic circuit generates a higher voltage to turn on the reprogrammable transistor.

When data is written into memory, the first step is to compare the incoming data with the data already stored in the memory cell. If the data matches, the device will enter into standby status. If the data is different, the memory cell’s content will be rewritten with the new data. The writing process requires two steps: the first step is to reset the data in the memory cell, and the second step is to write the new data into memory cell.

Read operation is achieved by using separate circuits at the address bus and data bus. The address bus specifies which memory cell is to be read, while the data bus receives the content of the specified memory cell and transfers it to the processor. Finally, the result is sent to the output circuit, so that the operator can view, process or store the data.

MT44K32M18RB-125F:A is a special static random access memory, which can process data at high speed and low power. It has wide application areas in automotive, networking and system control. Its working principle is to write and read data from memory cells, with the help of transistors and capacitors.

The specific data is subject to PDF, and the above content is for reference

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