MT44K16M36RB-093F:B

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MT44K16M36RB-093F:B Application Field and Working Principle

MT44K16M36RB-093F:B is a low-power and high-speed memory device that offers an 8-bit data transfer rate. This device integrates 3Mbits/sec of rate and 333MHz data bus speeds. It is an ideal memory device for mobile and consumer applications such as routers, GPS, and mobile phones.

The MT44K16M36RB-093F:B operates on a low-voltage single ended operation up to 1.8 Volts and is designed to comply with the Joint Electron Device Engineering Council (JEDEC) DDR3 standard Solid State Hard Drives. It is manufactured using 65 nanometer process technology, making it smaller and more energy efficient. The product comes with three levels of latencies: CAS latency of 9 cycles, a read latency of 7 cycles, and a write latency of 7 cycles.

The MT44K16M36RB-093F:B is designed to offer 16 Gbit of storage and is able to store data over 64 byte channels. The device uses 4 ranks per channel, which makes it possible to store more data on a single chip. Furthermore, the device can support up to 2000 MT/sec of data transfer from the host device to the memory.

The MT44K16M36RB-093F:B uses a Wide I/O (WIO) architecture, which allows for low-cost and low-power communication between the host device and the memory. The device features a x4 data bus width, which increases the data bus speed and reduces the power consumption of the device. Additionally, the device includes an integrated error correction code (ECC) which can help protect the data stored in the memory from corruption or loss.

The MT44K16M36RB-093F:B has a wide range of applications, such as but not limited to portable media players, digital cameras, gaming consoles, and embedded applications. The device is also ideal for industrial applications such as factory automation, data centers, and telemetry systems. Additionally, the device can be used for automotive applications, including activated safety systems and in-vehicle infotainment systems.

The working principle behind the MT44K16M36RB-093F:B device is that a voltage must be applied to the device in order to access data stored in the memory. The Memory Controller then transfers the requested data to the DRAM controller, which then transfers the data to the host device. The device also uses an advanced error correction code (ECC) which helps protect data stored in the memory from corruption or loss.

In summary, MT44K16M36RB-093F:B is a low-power, high-speed memory device capable of operating at 3Mbits/sec and 333MHz bus speeds. This device is designed to offer 16 Gbit of storage with 4 ranks per channel and supports up to 2000MT/sec data transfer from the host device to the memory. The MT44K16M36RB-093F:B has a wide range of applications such as portable media players, digital cameras, gaming consoles, embedded systems, factory automation, data centers, telemetry systems, automotive, and more. The working principle behind the device is that an applied voltage is used to access data stored in the memory, which is then transferred to the DRAM controller, and then to the host device for processing.

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