MT44K32M18RB-125E:A Allicdata Electronics
Allicdata Part #:

557-1550-ND

Manufacturer Part#:

MT44K32M18RB-125E:A

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 576M PARALLEL 168BGA
More Detail: DRAM Memory IC 576Mb (32M x 18) Parallel 800MHz 10...
DataSheet: MT44K32M18RB-125E:A datasheetMT44K32M18RB-125E:A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: MT44K32M18
Supplier Device Package: 168-BGA
Package / Case: 168-TBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.28 V ~ 1.42 V
Memory Interface: Parallel
Access Time: 10ns
Series: --
Clock Frequency: 800MHz
Memory Size: 576Mb (32M x 18)
Technology: DRAM
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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Memory is a critical component accessed by almost all applications. A critical aspect of memory is its reliability, and one type of memory widely used in applications is the MT44K32M18RB-125E. This article will discuss the application fields and working principle of the MT44K32M18RB-125E.

Application Fields

The MT44K32M18RB-125E is a type of DDR4 SDRAM memory. It is designed for use in instances where high-performance memory is required and where reliability is critical. Typical application fields include industrial computers and embedded devices, as well as computer hardware and software applications such as server and storage applications, graphics and video acceleration, gaming, and AI-enabled applications.

The MT44K32M18RB-125E is also designed for use in ultra-low power applications. In many instances, designers are looking for solutions for which the memory must maintain performance and reliability while consuming minimal power. The MT44K32M18RB–125E, then, can provide the necessary performance at a relatively low power level.

Working Principle

The MT44K32M18RB-125E works on the DDR4 SDRAM protocol. It uses two separate pieces of physical memory referred to as channels to store data. The channels are arranged in a 4-by-8 configuration, meaning that each channel has four independent memory chips, and the unit has a total of 8 channels. Each chip contains 32 megabits (Mb) of memory, for a total of 256 Mb of total memory.

Each of the memory chips is connected to its own data bus, allowing for concurrent operation on the 2 channels. This enables the MT44K32M18RB-125E to access multiple channels of information simultaneously. This improves the overall throughput of the unit, enabling faster performance.

The MT44K32M18RB-125E memory also supports Error Correcting Code (ECC) technology. ECC can detect and correct any bit errors in the data stored in the memory. This helps enhance the durability and reliability of the MT44K32M18RB-125E memory.

In addition, the MT44K32M18RB-125E memory supports dynamic refresh technology. This ensures that the memory chips maintain their data integrity even during periods of planned and unplanned system idle time. The power consumption of the memory is also minimized through advanced power saving features.

Conclusion

The MT44K32M18RB–125E memory is an ideal solution for applications in which fast, reliable, and power-efficient memory is needed. Its DDR4 SDRAM technology, ECC, and dynamic refresh make it a very reliable product, and its 4-by-8 arrangement of memory chips allows for faster performance. The MT44K32M18RB-125E is an excellent memory solution for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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