MT49H16M36BM-33:B TR

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Memory technology plays a critical role in the advancement of computing power, allowing computers to store and retrieve vast amounts of data. One of the latest memory technologies to hit the market is the MT49H16M36BM-33:B TR. This type of memory is a type of Static Random Access Memory (SRAM) used for high density applications.

SRAM technology is a system of memory based on transistors that are used to store data. It is volatile memory, meaning it requires a constant power source to maintain the data that is written to it. SRAM is much faster than dynamic random access memory (DRAM) making it a very attractive form of memory particularly in high performance applications. Due to its high speed performance, SRAM is often used in caches within computers.

The MT49H16M36BM-33:B TR is a 16 Megabit (Mb) 4K×4 SRAM that is packaged in a Thin Fine Line (TFL) Bump Chip Carrier (BCC). TFL is a type of chip package that is based on a thin substrate that is fused onto the die or chip. The TFL package is able to provide increased signal speed and stability due to the reduced inductance of the substrate over traditional designs. BCC, the second type of packaging used on the MT49H16M36BM-33:B TR, has a reduced footprint in comparison to traditional packages. This allows for higher density applications, where space and power are extremely limited, such as in portable applications.

The MT49H16M36BM-33:B TR is composed of 8K×8 registers, where each register is composed of a data input and data output. The data output of each register is connected to the address decoder and is used to enable the input/output (I/O) operations which are controlled by the address decoder. With this setup, data can be read from and written to the register. The working voltage of the MT49H16M36BM-33:B TR is between 2.7 to 2.9 volts.

The primary application of the MT49H16M36BM-33:B TR is in high speed, low power, and high density memories. As a high speed form of memory, the MT49H16M36BM-33:B TR is well suited for application in computers and other electronic devices that require a higher level of performance than what traditional DRAM technology can offer. It can also be used in embedded applications such as industrial control systems, and medical imaging.

The MT49H16M36BM-33:B TR is an advanced form of SRAM technology which provides the high performance requirements for specific application areas. The thin fine line (TFL) and bump chip carrier (BCC) packages allow for the memory to be used in high density and low power applications, where space and power are limited. This type of memory is often used in caches within computers, in industrial control systems and medical imaging, as well as in other large scale computer applications.

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