MT49H64M9SJ-25E:B TR Allicdata Electronics
Allicdata Part #:

MT49H64M9SJ-25E:BTR-ND

Manufacturer Part#:

MT49H64M9SJ-25E:B TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 576M PARALLEL 144FBGA
More Detail: DRAM Memory IC 576Mb (64M x 9) Parallel 400MHz 15n...
DataSheet: MT49H64M9SJ-25E:B TR datasheetMT49H64M9SJ-25E:B TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (64M x 9)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: --
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-FBGA (18.5x11)
Description

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Memory: MT49H64M9SJ-25E:B TR Application Field and Working Principle

Memory technology is a major part of the IT industry and is used in many different applications, such as mobile phones, tablets, laptops, desktops, servers, workstations, cloud storage, and many more. A type of memory used in many of these applications is DRAM, or dynamic random-access memory. The MT49H64M9SJ-25E:B TR is a type of DRAM memory designed for use in high-performance, low-power applications. In this article, we will discuss the application fields for the MT49H64M9SJ-25E:B TR and its working principle.

Applications for the MT49H64M9SJ-25E:B TR

The MT49H64M9SJ-25E:B TR is ideal for use in high-performance, low-power applications. It is designed to deliver high performance while minimizing power consumption. It is ideal for applications such as mobile phones, tablets, laptops, and other mobile devices. It can also be used in industrial and embedded applications, such as healthcare, automotive, IoT, and telecommunications.

Working Principle of the MT49H64M9SJ-25E:B TR

The MT49H64M9SJ-25E:B TR is a type of DRAM memory that is designed to perform at high speeds and with low power consumption. It is made up of a stack of DRAM cells in a 4-bit configuration. Each cell stores 4 bits of data. The data is read from and written to the cells using a voltage reference, a sensing transistor and a storage capacitor. When a read operation is performed, the voltage reference supplies the appropriate voltage to the cells and the sensing transistors detect the current level in the cells, which is then used as the data. When writing data to the cells, the voltage reference supplies the appropriate voltage to the cells and the sensing transistors detect the current level in the cells, which is then stored on the capacitors. When the data needs to be accessed again, the stored charge is used to determine the data stored.

Conclusion

The MT49H64M9SJ-25E:B TR is a type of DRAM memory designed for high-performance, low-power applications. It is made up of a stack of DRAM cells in a 4-bit configuration and uses a voltage reference, a sensing transistor and a storage capacitor to read from and write data to the cells. It is ideal for use in mobile phones, tablets, laptops, desktops, servers, workstations, cloud storage, and many other applications.

The specific data is subject to PDF, and the above content is for reference

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