MT49H8M36FM-25 TR

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Base Part Number:	MT49H8M36
Supplier Device Package:	144-µBGA (18.5x11)
Package / Case:	144-TFBGA
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 95°C (TC)
Voltage - Supply:	1.7 V ~ 1.9 V
Memory Interface:	Parallel
Access Time:	20ns
Series:	--
Clock Frequency:	400MHz
Memory Size:	288Mb (8M x 36)
Technology:	DRAM
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Memory: MT49H8M36FM-25 TR Application Field and Working PrincipleMemory technology has advanced significantly over the past decades. Today, DRAM, SDRAM, and other types of memory technologies are widely available on the market for various applications. More recently, multi-bank dynamic random access memory (DRAM) chips from Micron Technology, called MT49H8M36FM-25 TR, have been gaining popularity in a variety of consumer and professional applications.The MT49H8M36FM-25 TR is a special type of DRAM chip specifically designed to address the needs of high-speed, low-power computing applications. It is a 64M-bit, 256Mb, 512Mb multi-bank dynamic random access memory chip that can support a wide range of applications. It has a maximum clock speed of 15 MHz and operates at a voltage range of 1.5V to 2.6V. It offers an extended temperature range of -40°C to +85°C, making it suitable for harsh environments and extended operation.The main application field of the MT49H8M36FM-25 TR is industrial and telecommunications. It is ideal for industrial automation applications, as its high-speed, low-power design makes it suitable for running tasks with minimal downtime. Additionally, its wide temperature range and extended operation capabilities make it suitable for use in difficult climates, where temperature swings from low to high can be expected. It is also used in telecommunications systems, where its high bandwidth could be utilized to provide large data rates.The MT49H8M36FM-25 TR works on the principle of dynamic random access memory (DRAM). DRAM is a type of memory technology that uses two transistors and a capacitor for each memory cell to store data. When a voltage is applied to one of the transistors, it transfers an electrical charge from the capacitor. This charge is then retained and can be read or written back to memory. The MT49H8M36FM-25 TR has multiple memory banks, each with its own data pin, allowing for multiple simultaneous accesses of the same data.The MT49H8M36FM-25 TR offers many advantages over traditional static RAM, including higher speeds, lower power consumption, and more robust operation. Its multiple memory banks allow for increased data throughput and improved system performance, while its wide temperature range and extended operation capabilities make it suitable for use in harsh environments. Additionally, its power consumption is quite low, making it an ideal choice for extreme applications.In conclusion, the MT49H8M36FM-25 TR is a high-speed, low-power, multi-bank dynamic random access memory chip from Micron Technology. It is ideal for various applications, including industrial automation and telecommunications, due to its wide temperature range and extended operation capabilities. Additionally, it offers improved system performance and increased data throughput due to its multiple banks and low power consumption.

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