MT49H32M18BM-25E:B TR

Introduction to the Memory MT49H32M18BM-25E:B TR

MT49H32M18BM-25E:B TR is a type of memory device manufactured by Micron Technology, Inc., a leader in memory and storage solutions for the data center, cloud computing, embedded, and enterprise markets. MT49H32M18BM-25E:B TR is used as dynamic random access memory (DRAM) in various applications, including servers, routers, and desktop PCs. It is also used in industrial control and embedded systems, such as automotive and medical applications. This memory device offers high-speed memory access times and low-power operation.

Application Field of MT49H32M18BM-25E:B TR

DRAM is commonly used in servers, routers, and desktop PCs due to its high-speed memory access times and low-power operation. In addition, MT49H32M18BM-25E:B TR is also used in various applications, including industrial control and embedded systems, such as automotive and medical applications. MT49H32M18BM-25E:B TR is designed to meet the needs of industrial and medical applications in terms of power efficiency and reliable data storage. It has the capability to sustain high read/write speeds for extended periods of time and offers superior resistance to environmental conditions, such as humidity and temperature.

Moreover, MT49H32M18BM-25E:B TR is suitable for applications that require higher data transfer rates and less power consumption. These include networking and communications applications such as IP networks and data centers, as well as gaming and entertainment applications. The device provides superior quality, performance and stability, and is tailored to meet the needs of fast-paced and changing video game and entertainment markets.

Working Principle of MT49H32M18BM-25E:B TR

MT49H32M18BM-25E:B TR is an asynchronous DRAM that operates with a unique cell array architecture. The device is based on a matrix in which cells are arranged in columns and rows. When a data bit is read or written, an address is sent over the address bus, which identifies a cell to be accessed. Then a row is activated by a signal from the row select line, making all the cells of that row accessible by the column select lines. Once the data is read or written, the row select signal is returned to its previous state, which returns the cell array to its original idle state.

In addition, MT49H32M18BM-25E:B TR is designed with an enhanced die-to-die interface, which allows for superior signal integrity and performance in wide-range memory applications. It also features a robust signal distribution throughout the chip, resulting in a low power address bus and low latency signal response. Finally, the device is built to deliver optimal performance even in extreme operating temperatures and environments.

Conclusion

MT49H32M18BM-25E:B TR is a type of memory device manufactured by Micron Technology, Inc. It is used as dynamic random access memory (DRAM) in various applications, such as servers, routers, desktop PCs, industrial control and embedded systems, and gaming and entertainment applications. It offers superior resistance to environmental conditions such as humidity and temperature, as well as ultimate performance even in extreme temperatures and environments. MT49H32M18BM-25E:B TR is built on a matrix array of cells, and operates with a unique cell array architecture and a robust signal distribution throughout the chip, resulting in a low power address bus and low latency signal response.