MT49H16M36BM-25:B

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The MT49H16M36BM-25:B is a device from Micron Technology, Inc., and it is a type of memory device. This device is available in a registered Dual Inline Memory Module (DIMM) and has a total capacity of 16,777,216 16-bit words. The MT49H16M36BM-25:B is a high performance asynchronous DRAM device, with support for Error Checking and Correction (ECC). It is designed to operate at a clock speed of up to 66MHz and a data transfer rate of up to 1333MB/s.

The MT49H16M36BM-25:B is designed to meet the needs of multiple different applications. It can be used in networking, storage and server applications, as well as embedded systems and memory modules. It can also be used in workstations, routers, switches and other embedded products. The device is particularly well suited to applications that require large amounts of data to be stored, such as telecommunications and embedded systems.

The MT49H16M36BM-25:B follows the DDR2-SDRAM Specification from JEDEC, which enables it to achieve high performance and reliability. It uses an asynchronous pin-out with a 72-bit data bus (4 ECC bits per byte), and it provides error detection and correction capability. It has an operating temperature of 0 to 85 degrees Celsius. The MT49H16M36BM-25:B is also RoHS compliant, meaning it does not contain any hazardous substances.

The working principle behind the MT49H16M36BM-25:B is one of asynchronous DRAM. This means that the device will read and write data at its own clock rate, rather than relying on the same clock rate that is used by the devices connected to it. Asynchronous DRAM is used when a higher degree of flexibility is needed than what is available with synchronous DRAM. The device will also use burst read and write commands, which allow it to read and write large amounts of data at high speeds.

The MT49H16M36BM-25:B has a number of features that make it ideal for use in a wide range of applications. It is compatible with a variety of buses, including Advanced eXtensible Interface (AXI) and VMEbus. It also supports Error Checking and Correction (ECC) for improved reliability and has built-in support for power-saving modes. Finally, the device offers performance enhancements to maximize its use in networking, storage and server applications.

The MT49H16M36BM-25:B is a powerful and reliable memory device that is well-suited for a variety of applications. Its advanced asynchronous DRAM technology provides high performance and flexibility while its built-in features support power-saving modes, error checking and correction, and advanced bus compatibility. With this device, users can expect high reliability, performance and versatility in a variety of different applications.

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