MT49H8M36BM-25E:B

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Memory plays an integral role in computing. From the time of its invention to today, memory has come a long way in getting faster, bigger and more efficient. MT49H8M36BM-25E:B is a type of memory that is used in a variety of applications. This article will discuss the application fields and working principle of MT49H8M36BM-25E:B.

MT49H8M36BM-25E:B is a SDRAM memory that is used for data storage in computers, tablets, smartphones, and other electronic devices. It is a double data rate synchronous dynamic RAM that is composed of four M4K memory modules for a total memory capacity of 32 megabytes. Each module contains 512Kx36 bits of storage with a bus frequency of 200MHz. The MT49H8M36BM-25E:B has a burst mode of 8, which means it can read and write data at 8 words at a time.

MT49H8M36BM-25E:B is commonly used in many different application fields. It is used in industrial control systems and embedded computer systems, such as factory automation control, internet of things, wearable devices, and home automation. In addition, it is used in modern consumer electronics and portable devices, including but not limited to televisions, game consoles, digital cameras, and other internet-connected devices.

The working principle behind the MT49H8M36BM-25E:B, can be explained by the operation of SDRAMs. SDRAMs are composed of a bank of memory cells arranged in a two-dimensional array. They are capable of storing and retrieving data at high speeds due to their asynchronous timing and addressing structures. The memory cells are composed of capacitors and MOSFET transistors which are used to store and read data. Each cell has two states for storing data, 0 and 1.

When a read or write operation is performed on an SDRAM, a row address strobe (RAS) signal is sent to select the row of memory cells. This RAS signal forces the memory cells in the selected row to store or return the data. The column address strobe (CAS) signal is then sent to select the specific column of data that is either to be read or written. Once the row and column have been selected, a read or write operation is performed.

The MT49H8M36BM-25E:B is designed to be high-speed, low-power and reliable. It uses a buffered EDO page mode technique to reduce the amount of address and control signals needed for a transfer operation. The memory is clocked using a self-timed clock signal and the burst ordering is set to 8 for maximum efficiency. The MT49H8M36BM-25E:B has a low power supply of 2.5V, allowing it to operate with minimum power consumption.

In conclusion, the MT49H8M36BM-25E:B is a type of memory that is used in many different application fields. It is a SDRAM memory module composed of four M4K memory modules for a total memory capacity of 32MB. It is a low power, high-speed and reliable storage option that is commonly used in industrial control systems, consumer electronics and embedded computer systems. It uses a buffered EDO page mode technique that reduces the amount of address and control signals needed for a data transfer, and operates with a 2.5V power supply.

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