| Allicdata Part #: | MT49H8M36BM-TI:BTR-ND |
| Manufacturer Part#: |
MT49H8M36BM-TI:B TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 288M PARALLEL 144UBGA |
| More Detail: | DRAM Memory IC 288Mb (8M x 36) Parallel 144-µBGA... |
| DataSheet: | MT49H8M36BM-TI:B TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Discontinued at Digi-Key |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | DRAM |
| Memory Size: | 288Mb (8M x 36) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.7 V ~ 1.9 V |
| Operating Temperature: | 0°C ~ 95°C (TC) |
| Mounting Type: | Surface Mount |
| Package / Case: | 144-TFBGA |
| Supplier Device Package: | 144-µBGA (18.5x11) |
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Memory plays a vital role in contemporary technology, allowing for the storing and retrieving of vast quantities of data. As technology advances, so does the need for high-performance and reliable memory solutions. Among high-density memories, one such solution is the MT49H8M36BM-TI:B TR, which is specifically designed for high-capacity memory applications. This article describes the MT49H8M36BM-TI:B TR\'s application field, working principle, and features.
Application Field
The MT49H8M36BM-TI:B TR is a high-density memory device specifically designed for use in automotive and medical applications, where it provides ultra-high-capacity memory storage. This memory device is capable of store up to 36 million words, making it an ideal solution for applications requiring large amounts of data storage.
The automotive application of the MT49H8M36BM-TI:B TR includes usage in the ABS and ECU motor vehicle control units. Its large storage capacity makes it suitable for use in automating processes such as steering, braking, and acceleration. In the medical application, this device can be used in electronic medical record systems, as well as in medical imaging. The device\'s high-capacity memory also makes it suitable for other applications in the automotive and medical fields.
Working Principle
The MT49H8M36BM-TI:B TR utilizes a multi-level cell (MLC) flash memory technology for its operation. This type of technology is used to store data in a three dimensional stack of cells. Each cell is composed of a bank of flash memory, usually referred to as a page, and each page can be divided into a number of blocks. The data is divided into pages, blocks, and cells which are stored in the memory device. In addition to this, the MLC flash memory devices have a high endurance, meaning they are capable of supporting multiple read and write cycles.
The data stored on the MT49H8M36BM-TI:B TR is secured using an Error Correction Code (ECC). The ECC is used to detect and correct errors that occur during the read and write operations. The data is then stored in the memory device\'s non-volatile storage cells. This makes it possible to store the data in the device even after power is removed.
Features
The MT49H8M36BM-TI:B TR provides several features which make it suitable for high-capacity memory applications. This device is rated as Industrial temperature range (I), meaning it can operate in a temperature range of -40°C to +85°C, making it suitable for use in extreme environments. It is also offered in an automotive grade package, making it suitable for use in automotive applications.
This device is also offered in an industrial or automotive electrical compatibility equivalent to AEC-Q100. It has a high temperature cyclic stress resistance, making it ideal for applications where high temperatures are expected. It also features an integrated ECC, which provides an improved reliability compared to other non-volatile memories.
In addition to these features, the MT49H8M36BM-TI:B TR also offers a range of other features such as low power requirements and a wide voltage range. It also offers a fast random read rate, allowing for rapid data retrieval. Finally, it offers a wide operating temperature range, making it suitable for use in a variety of different applications.
Conclusion
The MT49H8M36BM-TI:B TR is an ideal solution for automotive and medical applications. Its high-capacity memory storage and integrated ECC technology make it suitable for use in high-performance applications. In addition, its low power requirements, wide operating temperature range, and fast random read rate make it an ideal choice for applications requiring fast, reliable data retrieval.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT49H8M36SJ-25:B | Micron Techn... | -- | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H16M36BM-18:B | Micron Techn... | -- | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H8M36BM-18:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H32M18CSJ-18:B | Micron Techn... | -- | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H32M18FM-25:B | Micron Techn... | -- | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H8M36FM-25:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H64M9FM-25:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H32M18BM-18:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H32M18BM-25E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H32M18CFM-18:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H8M36BM-25:B | Micron Techn... | -- | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H16M36BM-25E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H16M16FM-5 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 144... |
| MT49H32M9SJ-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H16M36BM-18 IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H16M36BM-25:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H16M18BM-25 IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H16M36BM-33:B | Micron Techn... | -- | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H32M18CBM-25 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H16M18FM-25 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H32M18FM-25E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H32M9BM-33:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H32M18CSJ-18:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H16M36SJ-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H8M36FM-25 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H16M36BM-25E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H8M36BM-25E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H32M18FM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H8M36SJ-25 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H8M36SJ-25E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H32M18SJ-18:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H16M36FM-25:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H64M9SJ-25E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H16M36SJ-25E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H16M18CTR-25:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 400... |
| MT49H16M18FM-25:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
| MT49H16M36SJ-18 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H16M36SJ-18 IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H16M36BM-25:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
| MT49H64M9BM-25:B | Micron Techn... | -- | 1000 | IC DRAM 576M PARALLEL 144... |
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MT49H8M36BM-TI:B TR Datasheet/PDF