MT52L256M64D2GN-107 WT ES:B TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR3
Memory Size:	16Gb (256M x 64)
Clock Frequency:	933MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	--
Voltage - Supply:	1.2V
Operating Temperature:	-30°C ~ 85°C (TC)

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MT52L256M64D2GN-107 WT ES:B TR Memory:
MT52L256M64D2GN-107 WT ES:B TR memory is a modern form of DRAM (Dynamic Random Access Memory) that utilizes a process technology to produce an exceedingly efficient memory device. This form of DRAM is ideal for applications where low power consumption and large storage capacity are required. It is used in devices such as mobile phones, tablets, laptops, and other electronics. It is also used in consumer electronics such as digital cameras, audio equipment, and gaming systems. Application Field: MT52L256M64D2GN-107 WT ES:B TR memory is used widely in consumer electronics and portable devices due to its small size, low power consumption, and high data transfer speeds. It is also very popular in consumer electronics such as digital cameras, audio equipment, and gaming systems. Additionally, it can be found in embedded applications such as industrial systems, automotive systems, and scientific and medical applications. Working Principle:MT52L256M64D2GN-107 WT ES:B TR memory is based on the DRAM technology, which stands for Dynamic Random Access Memory. The memory device has a number of cells, each of which consists of two capacitors and a transistor. The capacitors are used to store binary data and the transistor is used as a switch to control the flow of data. The charge stored in the capacitors determines the state of the memory, either “1” for a high state or “0” for a low state. When the memory device is powered on, the capacitors are pre-charged with either a ‘1’ or a ‘0’ depending on the desired state. When a read or write operation is performed, the transistor is activated to read or write data in the form of electrical signals. During a write operation, the charge on the capacitor is changed to the desired state, while during a read, the charge on the capacitor is read and sent to the output. The main advantage of DRAM technology is that it is fast and can access large amounts of data quickly. Conclusion:MT52L256M64D2GN-107 WT ES:B TR memory is a type of DRAM that offers high performance, low power consumption, and large storage capacity. It is used extensively in consumer electronics and portable devices, as well as in embedded applications such as industrial systems, automotive systems and medical/scientific applications. Its working principle is based on Dynamic Random Access Memory technology, wherein data is stored in capacitors and transistors control the flow of electrical signals.

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