MT52L512M32D2PU-107 WT:B

Series:	--
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR3
Memory Size:	16Gb (512M x 32)
Clock Frequency:	933MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	--
Voltage - Supply:	1.2V
Operating Temperature:	-30°C ~ 85°C (TC)

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Memory Applications and Working Principles of MT52L512M32D2PU-107 WT:B

The MT52L512M32D2PU-107 WT:B is a Random Access Memory (RAM) device which provides a wide range of benefits when used in memory functions. Here, we discuss the application field and working principle of the MT52L512M32D2PU-107 WT:B and provide an overview of its advantages in embedded applications.

Application Field

The MT52L512M32D2PU-107 WT:B is an excellent choice for memory applications in a wide range of industries and embedded systems. Its small physical size makes it ideal for compact devices and low power consumption, which is important for portable devices. It is the perfect choice for data storage in industrial systems, with its high read and write speeds and low power consumption. Additionally, its low cost makes it an option for many budget-restricted applications.

Working Principle

The MT52L512M32D2PU-107 WT:B is designed to store and retrieve data quickly and reliably. It uses multiplexed address and data bus architectures to read and write data, making it more efficient than conventional RAMs. It utilizes a “load store” operation, which allows multiple address lines to be used in parallel to input multiple accesses within a single operation.The MT52L512M32D2PU-107 WT:B supports multiple memory architectures and provides four different configuration modes. It supports both asynchronous and synchronous operations and has an optional 16-bit or 8-bit data bus. Its data bus methods can also be configured for read or write operations.The MT52L512M32D2PU-107 WT:B can be integrated within a variety of embedded systems with its advanced level of integration. Its core functions, such as read, write and refresh operations, can be accessed using its built-in Application Programming Interface (API). Additionally, its on-chip address decoders and error detection and correction logic provide efficient data handling, allowing for a higher level of reliability and performance.

Conclusion

The MT52L512M32D2PU-107 WT:B is a powerful and cost-effective Random Access Memory that can provide reliable data storage and retrieval functions in a variety of embedded systems. Its advanced level of integration and wide range of applications make it an excellent choice for memory requirements in industrial and portable applications.

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