Allicdata Part #: | MT52L256M64D2LZ-107XT:B-ND |
Manufacturer Part#: |
MT52L256M64D2LZ-107 XT:B |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 16G 933MHZ |
More Detail: | SDRAM - Mobile LPDDR3 Memory IC 16Gb (256M x 64) ... |
DataSheet: | MT52L256M64D2LZ-107 XT:B Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR3 |
Memory Size: | 16Gb (256M x 64) |
Clock Frequency: | 933MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | -- |
Voltage - Supply: | 1.2V |
Operating Temperature: | -30°C ~ 105°C (TC) |
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The MT52L256M64D2LZ-107 XT:B is a dynamic random access memory with integrated circuit that plays an important role in the memory industry, with a wide range of applications in various sectors, such as computing, data communication and telecommunications. The MT52L256M64D2LZ-107 XT:B has a high speed of operation and a low power consumption, making it an attractive solution for the demanding mobile and embedded applications.
The MT52L256M64D2LZ-107 XT:B is a 256Mbit device with a 64-bit data width and 1.2v supply voltage. The memory has a low power architecture which allows for a low power operating state and reduced power during standby. It also features on-die termination for improved signal integrity. The MT52L256M64D2LZ-107 XT:B operates at a maximum speed of 133MHz, at a 1.2V supply voltage, with a write latency of 4 clock cycles and a read latency of 3 clock cycles.
The MT52L256M64D2LZ-107 XT:B is ideal for embedded applications, as it is capable of operating in ambient temperatures of -40°C up to 85°C. The chip has a toggle-mode Burst Mode which allows data to be transferred at balanced speeds across the whole interface. This feature is especially useful for applications with multiple data streams, or in which data throughput is of paramount importance.
The MT52L256M64D2LZ-107 XT:B includes advanced features to enable error-free data transmission and reliable operation. The memory features an error correction code (ECC) which enables data to be corrected during transmission, thereby providing greater data integrity. Additionally it includes a built-in parity check and data scrubbing so that read errors can be rectified and data corrupted by external events such as voltage transients can be corrected.
The MT52L256M64D2LZ-107 XT:B has a wide range of applications in which it can be utilized. It can be used as a primary memory in embedded applications such as routers, modems and embedded controllers, as well as in high-performance computing applications such as servers and supercomputers. It can also be used in mobile devices, providing the ability to quickly store and access information while on the go. Additionally, it is used in high-performance graphics cards, providing the speed and capacity needed to handle intensive graphics tasks.
The MT52L256M64D2LZ-107 XT:B uses a synchronous dynamic random access memory (SDRAM) technology, which is a type of random access memory (RAM) that synchronizes its operation with an external clock signal. The MT52L256M64D2LZ-107 XT:B is a synchronous page-mode type of SDRAM, which means that it can access data sequentially from a single page, rather than randomly. This feature provides the memory with a faster access time than standard random access memory.
The MT52L256M64D2LZ-107 XT:B is a versatile memory solution that can be used in a wide range of applications. Its low power architecture, wide temperature range and high speed of operation make it an attractive solution for mobile and embedded applications. Additionally, its error detection and correction features ensure reliable operation and data transmission. Combined with its wide range of applications, the MT52L256M64D2LZ-107 XT:B makes an attractive choice for memory requirements.
The specific data is subject to PDF, and the above content is for reference
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