Allicdata Part #: | MT52L256M64D2QB-125XTES:B-ND |
Manufacturer Part#: |
MT52L256M64D2QB-125 XT ES:B |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 16G 800MHZ FBGA |
More Detail: | SDRAM - Mobile LPDDR3 Memory IC 16Gb (256M x 64) ... |
DataSheet: | MT52L256M64D2QB-125 XT ES:B Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR3 |
Memory Size: | 16Gb (256M x 64) |
Clock Frequency: | 800MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | -- |
Voltage - Supply: | 1.2V |
Operating Temperature: | -- |
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.The memory known as the MT52L256M64D2QB-125 XT ES:B is a type of dynamic random access memory (DRAM) chips, which stands for initialism for “high-throughput, low-power single-transistor dynamic random access”. This technology is most commonly used for memory storage in desktop computers, mobile phones, and other computing devices. It is usually integrated with the processor, allowing for larger memory capacity to store instructions and data that the processor needs to operate. This technology is commonly found in embedded systems, such as digital appliances, gaming consoles, and digital cameras.
The MT52L256M64D2QB-125 XT ES:B’s main feature is its high throughput, low power single-transistor dynamic random access (HTLP-DRAM). This technology enables the chip to quickly access large amounts of data and instructions, while using low power. Additionally, the single-transistor DRAM architecture is able to reduce latency, making it ideal for applications requiring quick access to large amounts of data. The MT52L256M64D2QB-125 XT ES:B also features an integrated error-correcting code (ECC), making it more reliable and less likely to experience data corruption.
The MT52L256M64D2QB-125 XT ES:B is a solution that is optimized to meet the memory requirements of various electronic systems. It is designed to provide low cost, high performance, and reliable memory control to a wide range of applications. Some examples of applications that can benefit from the MT52L256M64D2QB-125 XT ES:B\'s technology include mobile phones for data storage and communication, navigation systems for tracking and mapping, medical systems for data collection and analysis, and video gaming consoles for multimedia processing and gaming.
The MT52L256M64D2QB-125 XT ES:B makes use of the HTLP-DRAM architecture for memory storage. It works by storing electrical charge in an array of capacitors and transistors. When the computer needs an instruction or data, it will send out an address signal. The MT52L256M64D2QB-125 XT ES:B will look up the requested data in its memory table and send it to the processor. To write data to memory, the chip will accept a signal from the processor and mark the capacitor associated with that address as charged, recording the data.
The MT52L256M64D2QB-125 XT ES:B offers a low-cost and reliable solution for building embedded systems with large memory capacity. The HTLP-DRAM architecture enables rapid data processing and the integrated ECC error-correction code makes this memory reliable and free from data corruption. This technology can be used in devices ranging from mobile phones, navigation systems, medical systems, digital appliances, and gaming consoles, offering a reliable and high performance solution to meet the needs of these applications.
The specific data is subject to PDF, and the above content is for reference
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